Abstract: A diode structure and a method of fabrication of the diode structure is described. In one example, the diode structure is a PIN diode structure and includes an N-type layer formed on a substrate, an intrinsic layer formed on the N-type layer, and a P-type layer formed on the intrinsic layer. The P-type layer forms an anode of the diode structure, and the anode is formed as a quadrilateral-shaped anode. According to the embodiments, a top surface of the anode can be formed with one or more straight segments, such as a quadrilateral-shaped anode, to reduce at least one of a thermal resistance or an electrical on-resistance. These changes, among others, can improve the overall power handling capability of the PIN diode structure.

Abstract: A Microwave/Millimeter-wave Monolithic Integrated Circuit (MMIC) device including PIN diode and Schottky diode circuits that provides improved performance with a reduced cost of manufacture. The planar, glass-passivated, MMIC device is fabricated in silicon technology and includes mesa isolation between the PIN diode and the Schottky diode. The PIN and Schottky diodes include respective anode regions having different thicknesses and resistivity for implementing the PIN and Schottky diode functions. Further, the Schottky anode region is formed relatively late in a process for fabricating the Si MMIC device to allow the Schottky anode region to be formed in approximately the same plane as the PIN anode region and to allow precise control of the relative thicknesses of the PIN and Schottky anode regions.