Abstract: An embodiment of a sensor device includes a base substrate, a circuit pattern formed overlying the interior surface of the substrate, a physiological characteristic sensor element on the exterior surface of the substrate, conductive plug elements located in vias formed through the substrate, each conductive plug element having one end coupled to a sensor electrode, and having another end coupled to the circuit pattern, a multilayer component stack carried on the substrate and connected to the circuit pattern, the stack including features and components to provide processing and wireless communication functionality for sensor data obtained in association with operation of the sensor device, and an enclosure structure coupled to the substrate to enclose the interior surface of the substrate, the circuit pattern, and the stack.

Abstract: Processes for fabricating physiological characteristic sensor devices are disclosed here. An embodiment of the fabrication process forms a circuit pattern on a base substrate, where the circuit pattern includes circuit layouts for multiple die locations. Component stacks are mounted to the circuit layouts. Each stack has features and components to provide processing and wireless communication functionality for obtained sensor data. An enclosure structure is formed overlying the base substrate to individually cover and enclose each of the component stacks. Sensor elements are fabricated on another surface of the substrate such that each sensor element has electrodes coupled to conductive plug elements formed through the substrate, and such that each sensor element corresponds to one die location. Next, the substrate is separated into physically discrete sensor device components.

Abstract: In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.

Abstract: In a general aspect, a high-voltage metal-oxide-semiconductor (HVMOS) device can include comprising a first gate dielectric layer disposed on a channel region of the HVMOS device and a second gate dielectric layer disposed on at least a portion of a drift region of the HVMOS device. The drift region can be disposed laterally adjacent to the channel region. The second gate dielectric layer can have a thickness that is greater than a thickness of the first gate dielectric layer.

Abstract: In one general aspect, a semiconductor processing method can include forming an N-type silicon region disposed within a P-type silicon substrate. The method can also include forming a field oxide (FOX) layer in the P-type silicon substrate where the FOX layer includes an opening exposing at least a portion of the N-type silicon region. The method can further include forming a reduced surface field (RESURF) oxide (ROX) layer having a first portion disposed on the exposed N-type silicon region and a second portion disposed on the FOX layer where the ROX layer includes a first dielectric layer in contact with the exposed N-type silicon region and a second dielectric layer disposed on the first dielectric layer. The method can further include forming a doped polysilicon layer having a first portion disposed on the first portion of the ROX layer and a second portion disposed on the second portion of the ROX layer.

Abstract: In one general aspect, a semiconductor processing method can include forming an N-type silicon region disposed within a P-type silicon substrate. The method can also include forming a field oxide (FOX) layer in the P-type silicon substrate where the FOX layer includes an opening exposing at least a portion of the N-type silicon region. The method can further include forming a reduced surface field (RESURF) oxide (ROX) layer having a first portion disposed on the exposed N-type silicon region and a second portion disposed on the FOX layer where the ROX layer includes a first dielectric layer in contact with the exposed N-type silicon region and a second dielectric layer disposed on the first dielectric layer. The method can further include forming a doped polysilicon layer having a first portion disposed on the first portion of the ROX layer and a second portion disposed on the second portion of the ROX layer.

Abstract: The invention relates to a system for deviating part of an external panel of a motor vehicle, during an accident to reduce the impact energy of a person colliding with deviated part of the external panel. The part is displaced in a deviation direction that is opposite to that of an impact direction of the person. The system includes a device for deviating the part. The device is engaged at least at one point on the part and permits a displacement of the part in the impact direction, if a person collides with the part.

Abstract: A method and apparatus for moving a portion of a vehicle hood away from a portion of the vehicle, the apparatus comprising: a first portion; a second portion, comprising; a fixed portion and a slidable portion slidably mounted to the first portion for movement between a first position and a second position, the fixed portion comprising a first opening at one end and an elongated opening, the slidable portion comprising a second opening juxtaposed to the first opening when the slidable portion is in the first position; a first connecting member being pivotally secured to the first portion at one end and releaseably secured to the second portion at another end by a pivot pin that is rotatably secured within the first opening and the second opening when the slidable portion is in the first position; a second connecting member being pivotally secured to the first portion at one end and slidably secured to the second portion at another end by a pin that is slidably received within the elongated opening of the fixe

Abstract: A wire bonding pad over an active area of a semiconductor die has grooves in two orthogonal sections thereof in the top surface of said wire bonding pad.

Abstract: A CMOS device with polysilicon protection tiles is shown in FIG. 2. LOCOS regions 12.1 and 12.2 separate adjacent active regions 16.1 from 16 and 18.1 from 18, respectively. On the upper surface of the LOCOS regions 12.1, 12.2 are polysilicon tiles 14.1, 14.2, respectively. At the corner of the gate polysilicon 14.3 and the polysilicon tiles 14.1 and 14.2 are oxide spacers 60.1-60.6. The polysilicon tiles 14.1, 14.2 have silicide layers 50.1, 50.2. Other silicide layers 50.4-50.6 are on the tops of the source, drain and polysilicon gate. An insulation layer 32 covers the substrate and metal contacts 36, 34, 38 extend from the surface of the layer 32 to the silicide layers on the source, gate and drain, respectively. The polysilicon tiles are made from the same layer of polysilicon as the gate and they are formed simultaneously with the gates. The intention of the polysilicon tiles is to reduce erosion of the field oxide between closely spaced active regions.

Abstract: A method and apparatus for moving a portion of a vehicle hood away from a portion of the vehicle, the apparatus comprising: a first portion; a second portion, comprising; a fixed portion and a slidable portion slidably mounted to the first portion for movement between a first position and a second position, the fixed portion comprising a first opening at one end and an elongated opening, the slidable portion comprising a second opening juxtaposed to the first opening when the slidable portion is in the first position; a first connecting member being pivotally secured to the first portion at one end and releaseably secured to the second portion at another end by a pivot pin that is rotatably secured within the first opening and the second opening when the slidable portion is in the first position; a second connecting member being pivotally secured to the first portion at one end and slidably secured to the second portion at another end by a pin that is slidably received within the elongated opening of the fixe

Abstract: The invention relates to a system for deviating part of an external panel of a motor vehicle during an accident to reduce the impact energy of a person colliding with deviated part of the external panel. The part is displaced in a deviation direction that is opposite to that of an impact direction of the person. The system includes a device for deviating the part. The device is engaged at least at one point on the part and permits a displacement of the part in the impact direction, if a person collides with the part.

Abstract: A CMOS device with polysilicon protection tiles is shown in FIG. 2. LOCOS regions 12.1 and 12.2 separate adjacent active regions 16.1 from 16 and 18.1 from 18, respectively. On the upper surface of the LOCOS regions 12.1, 12.2 are polysilicon tiles 14.1, 14.2, respectively. At the corner of the gate polysilicon 14.3 and the polysilicon tiles 14.1 and 14.2 are oxide spacers 60.1-60.6. The polysilicon tiles 14.1, 14.2 have silicide layers 50.1, 50.2. Other silicide layers 50.4-50.6 are on the tops of the source, drain and polysilicon gate. An insulation layer 32 covers the substrate and metal contacts 36, 34, 38 extend from the surface of the layer 32 to the silicide layers on the source, gate and drain, respectively. The polysilicon tiles are made from the same layer of polysilicon as the gate and they are formed simultaneously with the gates. The intention of the polysilicon tiles is to reduce erosion of the field oxide between closely spaced active regions.

Abstract: The invention relates to an airbag retention system that is arranged in the area of the lower part of the body of the passenger. According to the invention, a gas bag is loosely placed on the body of the passenger in an inactivated state. Said gas bag has two ends enabling it to be secured to components of the vehicle. At least one end is secured to and can be detached from said vehicle. Preferably, the inactivated gas bag is placed loosely on the upper part of the legs of the passenger.

Abstract: A new apparatus for supplying discreet amounts of glue to sheets of paper positioned beneath glue heads is presented. The new glue nozzle consists of an essentially vertical chamber into which air pressure is introduced perpendicularly to the vertical alignment of the chamber. A glue needle is inserted down the center of the vertical chamber. Glue is supplied through the glue needle in droplets by applying pressure to the glue bottle. As a glue droplet accumulates at the bottom of the glue supply needle, a pulse of air is sent into the glue chamber and pushes the droplet off of the glue needle and onto the target. As the next sheet is moved into place underneath the glue needle, another droplet accumulates. When the droplet and sheet are aligned, a pulse of air blasts the droplet off the end of the needle onto the next sheet.