Patents by Inventor Daniel Hartzler

Daniel Hartzler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11885746
    Abstract: One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: January 30, 2024
    Assignee: United States Department of Energy
    Inventors: Dustin McIntyre, Daniel Hartzler
  • Publication number: 20220407283
    Abstract: One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.
    Type: Application
    Filed: August 26, 2022
    Publication date: December 22, 2022
    Inventors: Dustin McIntyre, Daniel Hartzler
  • Patent number: 11451004
    Abstract: One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: September 20, 2022
    Assignee: U.S. Department of Energy
    Inventors: Dustin McIntyre, Daniel Hartzler
  • Publication number: 20210119403
    Abstract: One or more embodiments relates to a method of growing ultrasmooth and high quantum efficiency CsTe photocathodes. The method includes exposing a substrate of Cs using an alkali source such as an effusion cell; and controlling co-evaporating growth and co-deposition forming a CsTe growth. The method further includes monitoring a stoichiometry of the CsTe growth.
    Type: Application
    Filed: October 19, 2020
    Publication date: April 22, 2021
    Inventors: Dustin McIntyre, Daniel Hartzler