Abstract: The present invention relates to histone deacetylase inhibitors, and to pharmaceutical compositions comprising the compounds, useful for the treatment of ischemia-reperfusion injury and for cardioprotection.

Abstract: The present invention relates to histone deacetylase inhibitors, and to pharmaceutical compositions comprising the compounds, useful for the treatment of ischemia-reperfusion injury and for cardioprotection.

Abstract: A method of administering income distributions from an employer-sponsored retirement plan having a participant account value comprises providing an option to a plan participant to elect lifetime payout funded by at least a portion of the participant's account value; providing an option to the participant to elect an excess period during which a participant maintains control over the portion of the account value; transferring the portion of the participant's account value into a group annuity contract; determining an initial benefit payment under the terms of the group annuity contract; determining a subsequent benefit payment; and paying the initial and subsequent payments to the participant. Other embodiments include one or more of these, and the step of determining a charge to be paid by the participant for the guaranteed lifetime payout.

Abstract: A method and apparatus for maintaining a scintillator including a window attached using a frit. The frit may be applied as a slurry, a tape or a preform. The window may be attached using an eyelet. A method and apparatus for maintaining a scintillator including a window attached by a braze.

Abstract: Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%.

Abstract: Supermolecular structures and devices made from same. Semiconductor materials and devices are manufactured and provided which use controlled, discrete distribution of and positioning of single impurity atoms or molecules within a host matrix to take advantage of single charge effects. Single-dopant pn junctions and single-dopant bipolar cells are created. Each bipolar cell can function as a bistable device or an oscillator, depending on operating temperature. The cells can be used alone or in an array to make useful devices by adding an insulating substrate and contact electrodes.

Abstract: Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%.

Abstract: Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).

Abstract: Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%.