Patents by Inventor Daniel J. Ehrlich

Daniel J. Ehrlich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4748045
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide and carbonyl vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, or cobalt carbonyl, Co.sub.2 (CO).sub.8, for direct writing of metal containing opaque patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 or cobalt thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3 or cobalt, can be grown with this process, the former at rates up to 3 /.mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic.
    Type: Grant
    Filed: March 16, 1987
    Date of Patent: May 31, 1988
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Mordecai Rothschild
  • Patent number: 4672254
    Abstract: A phase and amplitude compensated surface acoustic wave (SAW) structure is described in which computer controlled compensation is achieved by laser chemical etching of selective portions of a compound chemical film deposited on the surface of a piezoelectric SAW substrate in the path of propagation. The compound film comprises a layer of amplitude attenuating cermet material formed on the substrate and a phase compensating layer of molybdenum formed over the cermet material and in contact with the substrate surface.
    Type: Grant
    Filed: October 11, 1985
    Date of Patent: June 9, 1987
    Assignee: Massachusetts Institute of Technology
    Inventors: Victor S. Dolat, Daniel J. Ehrlich, Jeffrey Y. Tsao
  • Patent number: 4668528
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, for direct writing of metal containing opaque oxide patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3, can be grown with this process, the latter at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic. Mass spectrometer and optical transmission measurements show that surface kinetics dominate the nucleation and growth rates.
    Type: Grant
    Filed: April 9, 1986
    Date of Patent: May 26, 1987
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Claudio Arnone, Mordecai Rothschild
  • Patent number: 4619894
    Abstract: A negative resist and masking process for microfabrication comprising an evaporated film of aluminum and oxygen which, in the as-deposited state, is highly conductive and has low resistance to etching, but when exposed to active radiation, such as by pulse laser thermal excitation, converts to a low electrical conductivity, high etchant resistive phase.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: October 28, 1986
    Assignee: Massachusetts Institute of Technology
    Inventors: Carl O. Bozler, Daniel J. Ehrlich, Jeffrey Y. Tsao
  • Patent number: 4615904
    Abstract: A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occuring primarily on the prenucleated portions of the substrate.
    Type: Grant
    Filed: April 1, 1985
    Date of Patent: October 7, 1986
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Thomas F. Deutsch, Richard M. Osgood, Howard Schlossberg
  • Patent number: 4608117
    Abstract: A method of growing patterned films on a substrate in a deposition chamber without masking, the method consisting of the following steps: pressurizing the chamber with a fluid medium to form a thin absorption layer on the substrate; evacuating the chamber to remove excess fluid medium; prenucleating portions of the substrate with a focused energy beam; repressurizing the chamber with a fluid medium; and inducing deposition of material from the fluid medium and thereby growing a patterned film with deposition occurring primarily on the prenucleated portions of the substrate.
    Type: Grant
    Filed: July 19, 1982
    Date of Patent: August 26, 1986
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Thomas F. Deutsch, Richard M. Osgood
  • Patent number: 4340617
    Abstract: An apparatus and method for depositing a layer of a surface-compatible material from the fluid phase onto a selected surface of a substrate body in a fluid deposition chamber features a laser source of optically focused energy directed toward the body surface in a selected pattern. The energy is focused at a position adjacent the selected surface. Apparatus is provided for introducing a fluid medium adjacent the surface of the body. The medium has at least one component which absorbs a portion of the incident laser energy at the selected frequency for effecting photodecomposition or photolysis of the component in the fluid phase. Thereby, the product(s) of the photolysis process are deposited in the selected pattern on the substrate surface. The pattern may be fixed in position or may be optically or mechanically scanned across the substrate body. Thereby, metal layers, metal interconnects, pn junction and ohmic contact forming layers, selectively doped regions, etc.
    Type: Grant
    Filed: May 19, 1980
    Date of Patent: July 20, 1982
    Assignee: Massachusetts Institute of Technology
    Inventors: Thomas F. Deutsch, Daniel J. Ehrlich, Richard M. Osgood