Patents by Inventor Daniel J. Gaspar

Daniel J. Gaspar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140042422
    Abstract: A light-emitting device, which improves the light output of organic light emitting diodes (OLEDs), includes at least one porous metal or metalloid oxide light extraction layer positioned between the substrate and the transparent conducting material layer in the OLED. The index of refraction of the light extraction layer and the light scattering may be tuned by changing the pore size, pore density, doping the metal oxide, adding an insulating, conducting or semiconducting component, or filling the pores, for example. A method for forming the light-emitting device includes forming at least one light extraction layer comprising a porous metal or metalloid oxide on a substrate, for example, using atmospheric pressure chemical vapor deposition (APCVD), and subsequently, forming a transparent conducting material on the light extraction layer.
    Type: Application
    Filed: March 26, 2012
    Publication date: February 13, 2014
    Applicants: Battelle Memorial Institute, Arkema Inc.
    Inventors: Gary S. Silverman, Roman K. Korotkov, Ryan C. Smith, Jun Liu, Daniel J. Gaspar, Asanga B. Padmaperuma, Liang Wang, Birgit Schwenzer, James S. Swensen
  • Publication number: 20080245304
    Abstract: A system is described for selectively depositing materials to surfaces at preselected locations and at controlled thicknesses. Materials can be further selectively deposited to sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces, e.g., to fill substrate feature patterns (vias). The invention finds application in such commercial processes as semiconductor chip manufacturing. The system is envisioned to provide alternatives to, or decreased need for, chemical mechanical planarization in semiconductor chip manufacturing.
    Type: Application
    Filed: June 16, 2008
    Publication date: October 9, 2008
    Inventors: Clement R. Yonker, Dean W. Matson, Daniel J. Gaspar, George S. Deverman
  • Patent number: 7402517
    Abstract: Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing.
    Type: Grant
    Filed: March 31, 2005
    Date of Patent: July 22, 2008
    Assignee: Battelle Memorial Institute
    Inventors: Clement R. Yonker, Dean W. Matson, Daniel J. Gaspar, George S. Deverman