Patents by Inventor Daniel J. Jackson

Daniel J. Jackson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ULTRA THIN DIE TO IMPROVE SERIES RESISTANCE OF A FET
    Publication number: 20120126313
    Abstract: A method for producing a power field effect transistor (FET) device having a low series resistance between the drain and source when switched on has the steps of: forming a vertical power FET in a semiconductor die; and back-grinding the semiconductor die to a thickness of less than or equal to about 100 ?m (4 mils) or less.
    Type: Application
    Filed: November 3, 2011
    Publication date: May 24, 2012
    Inventors: Rohan S. Braithwaite, Randy L. Yach, Daniel J. Jackson, Gregory Dix
  • Method of removing sharp edges in a dielectric coating located above a semiconductor substrate and a semiconductor device formed by this method
    Patent number: 5565381
    Abstract: This disclosure is directed to a method of producing a smooth surface for a dielectric coating that is located above the surface of a semiconductor substrate containing doped regions of a semiconductor device. Sharp edges formed in the dielectric coating during certain semiconductor processing steps are removed using a deposition process to deposit a separate insulating layer on the dielectric coating containing the sharp edges followed by an annealing operation and the subsequent removal of the separate insulating layer to permit the subsequent formation of electrodes on a smooth surface of the dielectric coating.
    Type: Grant
    Filed: August 1, 1994
    Date of Patent: October 15, 1996
    Assignee: Microchip Technology Incorporated
    Inventor: Daniel J. Jackson