Abstract: Techniques are presented for the application of neural networks to the fabrication of integrated circuits and electronic devices, where example are given for the fabrication of non-volatile memory circuits and the mounting of circuit components on the printed circuit board of a solid state drive (SSD). The techniques include the generation of high precision masks suitable for analyzing electron microscope images of feature of integrated circuits and of handling the training of the neural network when the available training data set is sparse through use of a generative adversary network (GAN).

Abstract: A data storage device includes a power supply circuit configured to supply power to the data storage device. The power supply circuit includes a voltage clamp configured to operate in a conduction state in response to an over-voltage condition of the power supply circuit. The power supply circuit also includes a fuse in series with the voltage clamp. The fuse is configured to open in response to a current flow through the fuse and the voltage clamp exceeding a threshold value. The power supply circuit also includes a switching device that is configured to latch in a forward conduction mode in response to the voltage clamp operating in the conduction state. The switching device couples power from a positive voltage bus to the voltage clamp when the switching device is in the forward conduction mode.

Abstract: A storage system has a memory that is organized in wordlines. Each wordline has a number of strings. A controller in the storage system changes, in each of the wordlines, which of the strings is a last string programmed. Doing so can unmask a program disturb error when triple-level cells in the memory are used as pseudo-multi-level cells. By unmasking the program disturb error, the controller can detect and correct the error.

Abstract: Embodiments of the present disclosure generally include methods of specially programming a set of memory cells, wherein each specially programmed memory cell is specially programmed along with programming a plurality of wordlines, and wherein each memory cell is specially programmed by altering a bitline and gate voltage applied to the memory cell. The methods further includes performing a sensing operation across a set of strings in the array of memory cells, determining, based on the sensing operation, whether one or more strings failed to conduct during a sensing operation, and determining the last programmed wordline using the one or more strings that failed to conduct.

Abstract: A data storage device includes a power supply circuit configured to supply power to the data storage device. The power supply circuit includes a voltage clamp configured to operate in a conduction state in response to an over-voltage condition of the power supply circuit. The power supply circuit also includes a fuse in series with the voltage clamp. The fuse is configured to open in response to a current flow through the fuse and the voltage clamp exceeding a threshold value. The power supply circuit also includes a switching device that is configured to latch in a forward conduction mode in response to the voltage clamp operating in the conduction state. The switching device couples power from a positive voltage bus to the voltage clamp when the switching device is in the forward conduction mode.

Abstract: A data storage device includes a memory device, an internal power supply, and a controller. When the data storage device is in an idle power state, the controller is configured to electrically isolate the data storage device from an external power source and draw power from the internal power supply to perform data storage operations. The power utilized for the data storage operations while the data storage device is in the idle power state may be exclusively from the internal power supply or a mixture of the internal power supply and the external power supply. The total power utilized during the idle power state is less than a threshold that is relative to the active power of the data storage device or at a fixed value.

Abstract: A storage system has a memory that is organized in wordlines. Each wordline has a number of strings. A controller in the storage system changes, in each of the wordlines, which of the strings is a last string programmed. Doing so can unmask a program disturb error when triple-level cells in the memory are used as pseudo-multi-level cells. By unmasking the program disturb error, the controller can detect and correct the error.

Abstract: A data storage device includes a memory device, an internal power supply, and a controller. When the data storage device is in an idle power state, the controller is configured to electrically isolate the data storage device from an external power source and draw power from the internal power supply to perform data storage operations. The power utilized for the data storage operations while the data storage device is in the idle power state may be exclusively from the internal power supply or a mixture of the internal power supply and the external power supply. The total power utilized during the idle power state is less than a threshold that is relative to the active power of the data storage device or at a fixed value.

Abstract: A memory circuit included in a computer system stores multiple program instructions in program code. In response to fetching a loop boundary instruction, a processor circuit may store, in a loop storage circuit, a set of program instructions included in a program loop associated with the loop boundary instruction. In executing at least one iteration of the program loop, the processor circuit may retrieve the set of program instructions from the loop storage circuit.

Abstract: Techniques are presented for the application of neural networks to the fabrication of integrated circuits and electronic devices, where example are given for the fabrication of non-volatile memory circuits and the mounting of circuit components on the printed circuit board of a solid state drive (SSD). The techniques include the generation of high precision masks suitable for analyzing electron microscope images of feature of integrated circuits and of handling the training of the neural network when the available training data set is sparse through use of a generative adversary network (GAN).

Abstract: An apparatus is provided that includes a reticle including a die, the reticle configured to increase a number of partial die that can be successfully used as partially operable die.