Abstract: A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.

Abstract: A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.

Abstract: A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a junction material stack over the base electrode, forming a hardmask over the junction material stack, etching away a portion of the junction material stack to form a Josephson junction (JJ) over the base electrode, and depositing a second dielectric layer over the hardmask, the JJ, the base electrode and the first dielectric layer. The method additionally comprises forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and forming a second contact through the second dielectric layer and the hardmask to electrically coupled the second contact to a second end of the JJ.

Abstract: A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.

Abstract: A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.

Abstract: A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a junction material stack over the base electrode, forming a hardmask over the junction material stack, etching away a portion of the junction material stack to form a Josephson junction (JJ) over the base electrode, and depositing a second dielectric layer over the hardmask, the JJ, the base electrode and the first dielectric layer. The method additionally comprises forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and forming a second contact through the second dielectric layer and the hardmask to electrically coupled the second contact to a second end of the JJ.

Abstract: A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a base electrode in the first dielectric layer with the base electrode having a top surface aligned with the top surface of the first dielectric layer. The method further comprises forming a Josephson junction (JJ) over the base electrode, depositing a second dielectric layer over the JJ, the base electrode and the first dielectric layer, and forming a first contact through the second dielectric layer to the base electrode to electrically couple the first contact to a first end of the JJ, and a second contact through the second dielectric layer to a second end of the JJ.

Abstract: A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.

Abstract: A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.

Abstract: A customization kit for a hand-held umbrella and methods fostering customization of such an umbrella are provided. In one disclosed embodiment, the method allows arranging in a baseline umbrella configuration one or more removable components for the umbrella. The removable component may be a component which is unblocked relative to a view of an external observer when the umbrella is in a closed condition. The method further allows configuring a customizing kit including an assortment of customizing components at least some of which are in a pre-finished condition, removing the removable component, and performing a customizing action in connection with the removable component resulting in a transformed umbrella look perceivable by the external observer when the umbrella is in the closed condition. In another embodiment, the customizing action may be accomplished with a replacement component manufactured by way of additive manufacturing.

Abstract: A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel.

Abstract: An explosive detection system includes an unmanned vehicle and a manned vehicle. The unmanned vehicle includes a reflector. The manned vehicle includes a ground penetrating radar. The manned vehicle also includes electronics configured to process radar signals that are reflected by the reflector to detect an explosive device. The manned vehicle follows the unmanned vehicle.

Abstract: An explosive detection system includes an unmanned vehicle and a manned vehicle. The unmanned vehicle includes a reflector. The manned vehicle includes a ground penetrating radar. The manned vehicle also includes electronics configured to process radar signals that are reflected by the reflector to detect an explosive device. The manned vehicle follows the unmanned vehicle.

Abstract: Improved gripping structures for a hand-held umbrella are provided. In one example structure, a first grip is fixedly attached to an end of a shaft of the umbrella, such as the end located distally away from a canopy of the umbrella. A second grip is coupled to the shaft. The second grip may be slidably repositionable along the shaft. The second grip may include an interlocking device to lock the second grip at a desired location along the shaft. The second grip may further include a runner interface. An accessory mount may be disposed at the first grip to couple an accessory, such as a camera, at the end of the shaft distally away from the canopy of the umbrella.

Abstract: A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel.

Abstract: Improved gripping structures for a hand-held umbrella are provided. In one example structure, a first grip is fixedly attached to an end of a shaft of the umbrella, such as the end located distally away from a canopy of the umbrella. A second grip is coupled to the shaft. The second grip may be slidably repositionable along the shaft. The second grip may include an interlocking device to lock the second grip at a desired location along the shaft. The second grip may further include a runner interface. An accessory mount may be disposed at the first grip to couple an accessory, such as a camera, at the end of the shaft distally away from the canopy of the umbrella.

Abstract: A radar system in which a frequency agile synthesizer is used to provide rapid frequency shifts and in which measures are taken to maintain phase coherency. The system is fully coherent such that all signals are derived from a common source and are capable of high pulse repetition rates in excess of 1 MHz. There are no inherent transmit duty cycle restrictions and the system is able to transmit complex phase and frequency modulated waveforms. A frequency interleaving scheme is used to resolve range ambiguities at high pulse repetition frequencies and the use of a complementary phase coding scheme allows a high range resolution processing with the transmitted waveforms.