Patents by Inventor Daniel J. Syverson

Daniel J. Syverson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etch chamber with gas dispersing membrane
    Patent number: 5458724
    Abstract: Processing gases in an etching chamber for semiconductor wafers are dispersed by a porous plastic membrane interposed between the source of gases and the wafer being processed. A peripheral outlet in the chamber wall exhausting gases is also traversed by a porous plastic membrane.
    Type: Grant
    Filed: March 8, 1989
    Date of Patent: October 17, 1995
    Assignee: FSI International, Inc.
    Inventors: Daniel J. Syverson, Richard E. Novak, Eugene L. Haak
  • Metal selective polymer removal
    Patent number: 5348619
    Abstract: A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.
    Type: Grant
    Filed: September 3, 1992
    Date of Patent: September 20, 1994
    Assignee: Texas Instruments Incorporated
    Inventors: Brynne K. Bohannon, Daniel J. Syverson
  • Apparatus for wafer processing with in situ rinse
    Patent number: 5169408
    Abstract: A wafer processing apparatus including a head defining an etching chamber, the sidewall of the head being slidable along the base so that the sidewall and base will normally define an etch chamber; and the sidewall may be moved upwardly to open a discharge passage for rinsing water, and a deflecting surface for deflecting the rinsing water downwardly and draining the rinsing water from the passage. The housing is separable above the deflector ring to provide access to the wafer for inserting the wafer and replacing it.
    Type: Grant
    Filed: January 26, 1990
    Date of Patent: December 8, 1992
    Assignee: FSI International, Inc.
    Inventors: Rex L. Biggerstaff, Charles W. Skinner, Daniel J. Syverson, Mark L. Jenson, James G. Kegley
  • HF gas etching of wafers in an acid processor
    Patent number: 4900395
    Abstract: Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.
    Type: Grant
    Filed: April 7, 1989
    Date of Patent: February 13, 1990
    Assignee: FSI International, Inc.
    Inventors: Daniel J. Syverson, Richard E. Novak
  • Method and apparatus for controlling simultaneous etching of front and back sides of wafers
    Patent number: 4857142
    Abstract: An enclosed chamber is provided to confine wafers to be processed with an etchent gas, and requiring moisture at the surface of the wafer in order to initiate the etching. Gases flowed over the face of the wafer and may be flowed across the backside of the wafer to controllably produce or restrict the etching, according to the nature of the gas supplied and flowed across the wafer.
    Type: Grant
    Filed: September 22, 1988
    Date of Patent: August 15, 1989
    Assignee: FSI International, Inc.
    Inventor: Daniel J. Syverson
  • Metal selective polymer removal
    Patent number: RE36006
    Abstract: A metal selective polymer removal process is disclosed which prevents metal lift-off for use especially suited for ULSI fabrication.
    Type: Grant
    Filed: October 31, 1996
    Date of Patent: December 22, 1998
    Assignee: FSI International, Inc.
    Inventors: Brynne K. Bohannon, Daniel J. Syverson