Abstract: A light-emitting fiber comprises an optical fiber having a number of light-emitting elements disposed along the length of one surface thereof. The light-emitting elements include a segmented hole injecting electrode on which an electro-luminescent material, such as an OLED material, is disposed and an electron injecting electrode overlying the OLED layer. The segmented hole injecting electrodes are connected together by an electrical conductor disposed on a side surface of the optical fiber. Electrical contacts connect to the electron injecting electrode and are disposed, at least in part, so as to not overlie the OLED layer. The electrodes, OLED material and contacts are deposited on the optical fibers by mask deposition, preferably utilizing masks adapted to contemporaneously process a plurality of fibers.

Abstract: A light-emitting fiber comprises an optical fiber having a number of light-emitting elements disposed along the length of one surface thereof. The light-emitting elements include a hole injecting electrode on which a patterned insulation layer is disposed having openings defining pixel areas. An electro-luminescent material, such as an OLED material, is disposed at least on such pixel areas and a segmented electron injecting electrode on the OLED layer. The hole injecting electrodes are connected together by an electrical conductor disposed on a side surface of the optical fiber. Electrical contacts connect to the electron injecting electrode and are disposed, at least in part, so as to overlie transverse portions of the insulation layer.

Abstract: Method and apparatus are provided for determining the diffusion length of minority carriers in semiconductor material, particularly amorphous silicon which has a significantly small minority carrier diffusion length using the constant-magnitude surface-photovoltage (SPV) method. An unmodulated illumination provides the light excitation on the surface of the material to generate the SPV. A manually controlled or automatic servo system maintains a constant predetermined value of the SPV. A vibrating Kelvin method-type probe electrode couples the SPV to a measurement system. The operating optical wavelength of an adjustable monochromator to compensate for the wavelength dependent sensitivity of a photodetector is selected to measure the illumination intensity (photon flux) on the silicon. Measurements of the relative photon flux for a plurality of wavelengths are plotted against the reciprocal of the optical absorption coefficient of the material.