Abstract: A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.

Abstract: A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.

Abstract: A method for determining the thickness of a plurality of coating layers, the method comprising: performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of said plurality of coating layers, irradiating the said plurality of layers with a pulse of THz radiation, said pulse comprising a plurality of frequencies in the range from 0.01 THz to 10 THz; detecting the reflected radiation to produce a sample response said sample response being derived from the reflected radiation; producing a synthesised waveform using the optical parameters and predetermined initial thicknesses of said layers; and varying said thicknesses and varying said optical parameters within the said search limits to minimise the error measured between the sample response and the synthesised waveform; and outputting the thicknesses of the layers.

Abstract: A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

Abstract: A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.