Patents by Inventor Daniel James Haxton

Daniel James Haxton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optical and X-ray metrology methods for patterned semiconductor structures with randomness
    Patent number: 12480893
    Abstract: Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.
    Type: Grant
    Filed: February 1, 2024
    Date of Patent: November 25, 2025
    Assignee: KLA Corporation
    Inventors: Daniel James Haxton, Christopher Liman, Inkyo Kim, Boxue Chen, Hyowon Park, Thaddeus Gerard Dziura, Nakyoon Kim, Houssam Chouaib, Anderson Chou, Dimitry Sanko
  • OPTICAL AND X-RAY METROLOGY METHODS FOR PATTERNED SEMICONDUCTOR STRUCTURES WITH RANDOMNESS
    Publication number: 20250237619
    Abstract: Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.
    Type: Application
    Filed: April 13, 2025
    Publication date: July 24, 2025
    Inventors: Daniel James Haxton, Christopher Liman, InKyo Kim, Boxue Chen, Hyowon Park, Thaddeus Gerard Dziura, Nakyoon Kim, Houssam Chouaib, Anderson Chou, Dimitry Sanko
  • OPTICAL AND X-RAY METROLOGY METHODS FOR PATTERNED SEMICONDUCTOR STRUCTURES WITH RANDOMNESS
    Publication number: 20250146961
    Abstract: Methods and systems for determining random variation in one or more structures on a specimen are provided. One method includes determining characteristic(s) of output generated by an output acquisition subsystem for structure(s) formed on a specimen and simulating the characteristic(s) of the output with initial parameter values for the structure(s). The method also includes determining parameter values of the structure(s) formed on the specimen as the initial parameter values that resulted in the simulated characteristic(s) that best match the determined characteristic(s). The determined parameter values are responsive to random variation in parameter(s) of the structure(s) on the specimen.
    Type: Application
    Filed: February 1, 2024
    Publication date: May 8, 2025
    Inventors: Daniel James Haxton, Christopher Liman, InKyo Kim, Boxue Chen, Hyowon Park, Thaddeus Gerard Dziura, Nakyoon Kim, Houssam Chouaib, Anderson Chou, Dimitry Sanko