Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.