Patents by Inventor Daniel KANIA

Daniel KANIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a solar cell involving doping by ion implantation and depositing an outdiffusion barrier
    Patent number: 10263135
    Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: April 16, 2019
    Assignee: ION BEAM SERVICES
    Inventors: Tim Boescke, Daniel Kania, Claus Schoellhorn
  • METHOD FOR PRODUCING A SOLAR CELL
    Publication number: 20160240724
    Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material. In a first surface (3a) of a semiconductor substrate (3), a first doping area (5) is formed by thermally diffusing a first dopant and in the second surface (3b) of the semiconductor substrate, a second doping area (7) is formed by implanting ions and thermally implanting a second dopant.
    Type: Application
    Filed: September 26, 2014
    Publication date: August 18, 2016
    Applicant: ION BEAM SERVICES
    Inventors: Tim BOESCKE, Daniel KANIA
  • METHOD FOR PRODUCING A SOLAR CELL INVOLVING DOPING BY ION IMPLANTATION AND DEPOSITING AN OUTDIFFUSION BARRIER
    Publication number: 20160233372
    Abstract: The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.
    Type: Application
    Filed: August 5, 2014
    Publication date: August 11, 2016
    Applicant: INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTAN Z E.V.
    Inventors: Tim BOESCKE, Daniel KANIA, Claus SCHOELLHORN