Patents by Inventor Daniel Keith Smith

Daniel Keith Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SACRIFICIAL SPACER FOR INTEGRATED CIRCUIT TRANSISTORS
    Publication number: 20010035558
    Abstract: An improved processing technique results in a structure which maximizes contact area by eliminating a sidewall spacer used to form LDD regions. A sacrificial spacer is provided during processing to form the LDD regions, and is then removed prior to further processing of the device. A sidewall spacer is then formed in a self-aligned contact from a later deposited oxide layer used as an interlevel dielectric. This leaves only a single oxide sidewall spacer alongside the gate electrode, maximizing the surface area available for the self-aligned contact itself.
    Type: Application
    Filed: October 5, 1999
    Publication date: November 1, 2001
    Inventors: GREGORY CLIFFORD SMITH, DANIEL KEITH SMITH
  • Method for forming integrated circuit transistors using sacrificial spacer
    Patent number: 6022782
    Abstract: An improved processing technique results in a structure which maximizes contact area by eliminating a sidewall spacer used to form LDD regions. A sacrificial spacer is provided during processing to form the LDD regions, and is then removed prior to further processing of the device. A sidewall spacer is then formed in a self-aligned contact from a later deposited oxide layer used as an interlevel dielectric. This leaves only a single oxide sidewall spacer alongside the gate electrode, maximizing the surface area available for the self-aligned contact itself.
    Type: Grant
    Filed: May 30, 1997
    Date of Patent: February 8, 2000
    Assignee: STMicroelectronics, Inc.
    Inventors: Gregory Clifford Smith, Daniel Keith Smith