Abstract: A wet-chemical treatment system for electrochemically coating flat substrates with coating material, has having a basin for receiving an electrolyte, a transporting means, by means of which the flat substrates can be transported through the electrolyte horizontally, and at least one contact element which comprises a shaft having an axis of rotation and a cylindrical circumferential surface suitable for rolling on the substrate, wherein the circumferential surface comprises at least one electrically insulated segment and at least one electrically conductive segment which can be connected to a current source in such a way that the polarity can be reversed, wherein the axis of rotation of the contact element is positioned above the surface of the electrolyte, and wherein the contact element is designed as a consumable electrode.

Abstract: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.

Abstract: A method for producing solar cells with back side contacting, which is based on a microstructuring of a wafer provided with a dielectric layer and a doping of the microstructured regions on the back side and also an emitter diffusion on the front side. Subsequently, the deposition of a metal-containing nucleation layer and also a galvanic reinforcement of the contactings on the back side is effected. Solar cells which can be produced in accordance with the foregoing method.

Abstract: A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period.

Abstract: A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.

Abstract: The invention relates to a method for the production of solar cells which are contacted on both sides, which method is based on micro structuring of a wafer provided with a dielectric layer and doping of the microstructured regions. Subsequently, deposition of a metal-containing nucleation layer and also a galvanic reinforcement of the contactings is effected. The invention relates likewise to solar cells which can be produced in this way.

Abstract: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Abstract: The invention relates to a method for precision processing of substrates in which a liquid jet which is directed towards a substrate surface and contains a processing reagent is guided over the regions of the substrate to be processed, a laser beam being coupled into the liquid jet. Likewise, a device which is suitable for implementation of the method is described. The method is used for different process steps in the production of solar cells.

Abstract: A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink comprising a first set of nanoparticles and a first set of solvents, the first set of nanoparticles comprising a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink comprising a second set of nanoparticles and a second set of solvents, the second set of nanoparticles comprising a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: The invention relates to a method for microstructuring solid surfaces by chemical or electrochemical etching, in which the solid surface is treated with an etching fluid with formation of intermediate products which are insoluble or low-soluble in the etching fluid. By additional use of a particle stream, these intermediate products can be removed in a simple manner. Associated herewith is the advantage that low damage microstructuring of solid bodies is made possible.

Abstract: The invention relates to a method for material removal on solid bodies, in particular for microstructuring and cutting, by means of liquid jet-guided laser etching, the removed material just as the non-reacted etching components being recycled to a high degree. In this way, silicon with high purity can be recovered either in a polycrystalline manner or be deposited epitaxially on other substrates in the same process chain.

Abstract: A process and an apparatus used to subdivide objects (4) into slices, in particular to manufacture wafers from semi-conducting monocrystalline blocks, wherein these blocks are subdivided into slices with the help of at least one cutting tool (3), and under the influence of an etchant. Prior to completely cutting and subdividing the object (4) (ingot) into individual slices (wafers), a separating foil (12) is introduced into each cut slit (9) to separate the slices. This efficiently prevents the resultant wafers from sticking together. The individual separation of the wafers is thus accomplished right when the cutting process takes place so that the necessary number of process steps to manufacture silicon wafers is reduced.

Abstract: A process and an apparatus used to subdivide objects (4) into slices, in particular to manufacture wafers from semi-conducting monocrystalline blocks, wherein these blocks are subdivided into slices with the help of at least one cutting tool (3), and under the influence of an etchant. Prior to completely cutting and subdividing the object (4) (ingot) into individual slices (wafers), a separating foil (12) is introduced into each cut slit (9) to separate the slices. This efficiently prevents the resultant wafers from sticking together. The individual separation of the wafers is thus accomplished right when the cutting process takes place so that the necessary number of process steps to manufacture silicon wafers is reduced.