Patents by Inventor Daniel L. Auclair
Daniel L. Auclair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7839685Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: October 1, 2009Date of Patent: November 23, 2010Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Publication number: 20100020616Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: ApplicationFiled: October 1, 2009Publication date: January 28, 2010Inventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 7616484Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: October 26, 2004Date of Patent: November 10, 2009Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 7548461Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: June 22, 2004Date of Patent: June 16, 2009Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 7437631Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: August 13, 2004Date of Patent: October 14, 2008Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Publication number: 20040237010Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: ApplicationFiled: June 22, 2004Publication date: November 25, 2004Inventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 6049899Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: July 8, 1998Date of Patent: April 11, 2000Assignee: Zilog, Inc.Inventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 6016530Abstract: Solid-state flash electrically erasable and programmable read-only-memory ("flash EEPROM") system is combined with a rotating disk drive memory to provide mass program and data storage in a computer system. A common memory controller directs system generated memory addresses in a disk format to either the EEPROM system or disk memory. The blocks of data handled by the EEPROM system have the same size and other attributes as sectors of data handled by the disk system, thereby making it transparent to the computer system processor as to whether it is accessing the EEPROM or disk portion of the storage system. A particular program or data file may then be stored in the portion of the memory system best suited to handle it, and thus take advantage of the different features and characteristics of EEPROM and magnetic media disk memory.Type: GrantFiled: April 21, 1998Date of Patent: January 18, 2000Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Eliyahou Harari
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Patent number: 5778418Abstract: Solid-state flash electrically erasable and programmable read-only-memory ("flash EEPROM") system is combined with a rotating disk drive memory to provide mass program and data storage in a computer system. A common memory controller directs system generated memory addresses in a disk format to either the EEPROM system or disk memory. The blocks of data handled by the EEPROM system have the same size and other attributes as sectors of data handled by the disk system, thereby making it transparent to the computer system processor as to whether it is accessing the EEPROM or disk portion of the storage system. A particular program or data file may then be stored in the portion of the memory system best suited to handle it, and thus take advantage of the different features and characteristics of EEPROM and magnetic media disk memory.Type: GrantFiled: August 8, 1994Date of Patent: July 7, 1998Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Eliyahou Harari
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Patent number: 5657332Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: March 20, 1995Date of Patent: August 12, 1997Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: 5532962Abstract: Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.Type: GrantFiled: March 21, 1995Date of Patent: July 2, 1996Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Jeffrey Craig, John S. Mangan, Robert D. Norman, Daniel C. Guterman, Sanjay Mehrotra
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Patent number: D439579Type: GrantFiled: November 22, 1999Date of Patent: March 27, 2001Assignee: SanDisk CorporationInventors: Daniel L. Auclair, Leon Malmed, Anthony J. Knights, Johnny H. Chen