Patents by Inventor Daniel L. Near
Daniel L. Near has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7901788Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.Type: GrantFiled: August 20, 2003Date of Patent: March 8, 2011Assignee: Howmet CorporationInventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
-
Patent number: 6911234Abstract: Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of a coating chamber.Type: GrantFiled: May 24, 2004Date of Patent: June 28, 2005Assignee: Howmet CorporationInventors: Bruce M. Warnes, Andrew L. Purvis, Daniel L. Near
-
Patent number: 6849132Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.Type: GrantFiled: August 20, 2003Date of Patent: February 1, 2005Assignee: Howmet Research CorporationInventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
-
Patent number: 6793966Abstract: Chemical vapor deposition apparatus and method are provided with external metal halide gas generators that reduce leakage of air into the generators so as to improve efficiency of use of the metal charge residing in each generator.Type: GrantFiled: September 10, 2001Date of Patent: September 21, 2004Assignee: Howmet Research CorporationInventors: Bruce M. Warnes, Andrew L. Purvis, Daniel L. Near
-
Publication number: 20040037958Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.Type: ApplicationFiled: August 20, 2003Publication date: February 26, 2004Applicant: Howmet Research CorporationInventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
-
Publication number: 20040038069Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.Type: ApplicationFiled: August 20, 2003Publication date: February 26, 2004Applicant: Howmet Research CorporationInventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
-
Patent number: 6689422Abstract: CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.Type: GrantFiled: February 16, 1994Date of Patent: February 10, 2004Assignee: Howmet Research CorporationInventors: Bruce M. Warnes, David C. Punola, Jeffery S. Smith, Daniel L. Near
-
Publication number: 20030049374Abstract: Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of a coating chamber.Type: ApplicationFiled: September 10, 2001Publication date: March 13, 2003Inventors: Bruce M. Warnes, Andrew L. Purvis, Daniel L. Near
-
Publication number: 20030047141Abstract: Chemical vapor deposition apparatus and method are provided with external metal halide gas generators that reduce leakage of air into the generators so as to improve efficiency of use of the metal charge residing in each generator.Type: ApplicationFiled: September 10, 2001Publication date: March 13, 2003Inventors: Bruce M. Warnes, Andrew L. Purvis, Daniel L. Near
-
Patent number: 6291014Abstract: A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.Type: GrantFiled: September 7, 1999Date of Patent: September 18, 2001Assignee: Howmet Research CorporationInventors: Bruce M. Warnes, Daniel L. Near, David C. Punola, William C. Basta
-
Patent number: 6143361Abstract: Method and apparatus for controlling deposition from excess gaseous reactant in an exhaust conduit of a chemical vapor deposition apparatus involves introducing a gaseous chemical reactant in the exhaust stream effective to react with the excess gaseous reactant in the exhaust stream to form solid reaction product particulates in a manner that reduces harmful deposition of liquid and/or solid metal in the exhaust system.Type: GrantFiled: October 19, 1998Date of Patent: November 7, 2000Assignee: Howmet Research CorporationInventors: Daniel L. Near, Bruce M. Warnes, Stephen M. Winters
-
Patent number: 5989733Abstract: A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.Type: GrantFiled: July 23, 1996Date of Patent: November 23, 1999Assignee: Howmet Research CorporationInventors: Bruce M. Warnes, Daniel L. Near, David C. Punola, William C. Basta
-
Patent number: 5407704Abstract: Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom.Type: GrantFiled: August 26, 1993Date of Patent: April 18, 1995Assignee: Howmet CorporationInventors: William C. Basta, David C. Punola, Daniel L. Near, Jeffery S. Smith
-
Patent number: 5261963Abstract: Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom.Type: GrantFiled: December 4, 1991Date of Patent: November 16, 1993Assignee: Howmet CorporationInventors: William C. Basta, David C. Punola, Daniel L. Near, Jeffery S. Smith