Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Abstract: The present invention describes methods and chemical compositions for the spin etch planarization of surfaces, particularly copper and tantalum. An etching solution is brought into contact with the upper face of a spinning wafer through a nozzle, preferably an oscillating nozzle. The etching solution has a composition that oxidizes the spinning surface, forming a passivation layer thereon. The etching solution further contains reactants for removing the passivation layer exposing the underlying surface to further reaction, leading to the desired etching of the surface. The characteristics of the etching solution are adjusted such that reactant diffusion to lower regions of the surface limits the rate of etching. Faster reaction occurs at higher regions of the surface lying in more rapidly moving etching solution resulting in the desired planarization.

Abstract: An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.

Abstract: A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films. A cured, globally planarized, polymeric dielectric thin film is produced on a semiconductor substrate by (a) depositing a polymeric, dielectric film composition onto a surface of a semiconductor substrate; (b) partially curing the deposited film; (c) performing a chemical mechanical polishing step to said partially cured dielectric film, until said dielectric film is substantially planarized; and (d) subjecting the polished film to an additional curing step. Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate. A thermal treatment partially cures the polymer. A chemical mechanical polishing step achieves global planarization. Another thermal treatment accomplishes a final cure of the polymer.

Abstract: A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.