Patents by Inventor Daniel Lamborn

Daniel Lamborn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming a magnetic random access memory etch spacer and structures formed thereby
    Patent number: 9318694
    Abstract: Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: April 19, 2016
    Assignee: Intel Corporation
    Inventors: Daniel Lamborn, Oleg Golonzka, Christopher Wiegand