Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; at least one electronic device having a first surface and a second surface, wherein the electronic device is secured to the base insulative layer; at least one I/O contact located on the first surface of the electronic device; and a frame panel defining an aperture, wherein the electronic device is disposed within the aperture, and the frame panel is a multi-functional structure having a first region comprising a first material, wherein a surface of the first region secures to the base insulative layer; and a second region comprising a second material, wherein the first material and the second material differ from each other and have differing adhesability to the base insulative layer.

Abstract: An electronic component includes a base insulative layer having a first surface and a second surface; at least one electronic device having a first surface and a second surface, wherein the electronic device is secured to the base insulative layer; at least one I/O contact located on the first surface of the electronic device; and a frame panel defining an aperture, wherein the electronic device is disposed within the aperture, and the frame panel is a multi-functional structure having a first region comprising a first material, wherein a surface of the first region secures to the base insulative layer; and a second region comprising a second material, wherein the first material and the second material differ from each other and have differing adhesability to the base insulative layer.

Abstract: The present invention provides a method and apparatus for high precision image metrology. A feature dimension from the image is determined by measuring corresponding features in the Fourier power spectrum of the image with substantially improved precision due to immunity from noise and system response. Operationally, a digital image of the sample is acquired at sufficient resolution to capture the feature of interest. A sample widow is chosen which substantially isolates the feature of interest. The feature window is then piecewise extended to a predetermined window size for effective Fourier Transform interpolation. A Fourier Power Spectrum of the sample widow is generated at high sample density such that the loci of extremal points indicative of a feature dimension is identified with high precision. The relative spacing of the extremal points is measured and related to the desired feature dimension.

Abstract: A measuring device for measuring the intensity and/or polarization of electromagnetic radiation, more in particular of light. The measuring device is provided with a tunnel tip arranged facing a body at some distance, which tunnel tip at least partly consists of a semiconductor material. The measuring device further comprises a control unit for obtaining information about the intensity and/or polarization of the radiation by means of a tunnel current, generated under the influence of the radiation in the tunnel tip, between the tunnel tip and the body and/or a surface photovoltage of the tunnel tip, generated under the influence of the radiation.