Abstract: In an embodiment a method for producing an optoelectronic assembly includes providing at least one component of the optoelectronic assembly, providing a source carrier with a functional material on a lower face of the source carrier facing the at least one component, detaching a part of the functional material by irradiation via a laser beam through an upper face of the source carrier facing away from the at least one component, attaching the detached part of the functional material to a side of the at least one component facing the source carrier and completing the optoelectronic assembly, wherein the source carrier comprises cavities, each cavity being filled with the functional material.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, at least one light-emitting optoelectronic semiconductor component arranged on an upper side of the carrier and having a first light emission area on a surface side facing away from the carrier and a second light emission area on a side surface perpendicular to the carrier, at least one functional layer arranged on the first light emission area and on the second light emission area, wherein the functional layer is a conversion layer containing phosphor, and a border interface surrounding the functional layer in plan view, wherein the border interface includes a transparent material, and wherein the border interface is located on an outer surface of the optoelectronic lighting device.

Abstract: In an embodiment a method includes providing a first carrier on which an electrical connection material or a flux material is arranged, providing a second carrier on which at least one optoelectronic component is arranged, positioning the first carrier relative to the second carrier such that the electrical connection material or the flux material is facing at least one electrical connection surface and is spaced from the at least one electrical connection surface, pulse irradiating the first carrier with laser light such that at least areas of the electrical connection material or the flux material are detached from the first carrier and fall onto the at least one electrical connection surface of the optoelectronic component, wherein the electrical connection material or the flux material is arranged in a structured manner on the first carrier, and wherein the first carrier is irradiated over a large area with the laser light in order to detach at least regions of the structured electrical connection materia

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.

Abstract: In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Abstract: In an embodiment a method for manufacturing at least one electronic component includes providing a second surface area of the component adjacent to a first surface area, wherein the second surface area is repulsive to a first fluid to be applied, applying the first fluid without additional pressurization to the first and/or second surface area, wherein the first surface area is wetted by the first fluid and the first fluid is repelled from the second surface area and applying a second fluid to the first surface area, to the second surface area and/or to a surface area of the solidified first fluid, after solidification of the first fluid applied to the first surface area, wherein applying the second fluid includes applying a positive pressure, a plasma action and/or a compression molding, and wherein the second fluid wets the second surface area.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: In an embodiment an optoelectronic component includes a radiation emitting semiconductor chip configured to emit primary electromagnetic radiation from a radiation emission surface, a conversion element configured to convert the primary electromagnetic radiation into electromagnetic secondary radiation, a first potting covering at least one side surface of the semiconductor chip, a second potting arranged on the first potting and an adhesion promoter with which the conversion element is fixed on the radiation emission surface of the semiconductor chip, wherein the adhesion promoter is arranged on a top surface of the first potting, wherein the first potting includes first filler particles, wherein the second potting includes second filler particles, and wherein a mass fraction of the first filler particles is greater than a mass fraction of the second filler particles per volume element.

Abstract: An optoelectronic component may be produced by providing a temporary carrier, applying a functional film to the temporary carrier, arranging optoelectronic elements within openings of the functional film in such a way that the mounting sides are facing towards the temporary carrier. The optoelectronic elements are thicker than the functional film such that the elements protrude beyond the functional film in a direction away from the temporary carrier. The method may further include applying a potting compound laterally around the elements and covering the function film and curing the potting compound to form a potting. The method may further include cutting between the openings to create individual optoelectronic components.

Abstract: In an embodiment an optoelectronic lighting device includes a carrier, exactly one light-emitting optoelectronic semiconductor component, wherein the semiconductor component has a light emission area on at least one surface side, and wherein the semiconductor component is arranged on an upper side of the carrier, at least one functional layer arranged above the light emission area and/or adjacent to the light emission area and an edging for the functional layer, wherein the edging surrounds the functional layer when viewed in a circumferential direction, the circumferential direction being parallel to the upper side of the carrier around the functional layer, and wherein the edging is formed of a transparent material.

Abstract: In an embodiment an apparatus includes a delimiting device and a holding device configured to hold the delimiting device at a distance above an optoelectronic light-emitting device and form a layer of a material provided in a flowable state between the delimiting device and the light-emitting device, wherein a bottom side of the delimiting device, which faces the light-emitting device, has a structuring so that a structure complementary to the structuring is producible on an upper side of the layer.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Abstract: In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material over the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; and removing a portion of the casting material at the cast surface, wherein a topography is generated at the cast surface, and the removal of a portion of the casting material at the cast surface takes place through laser interference structuring.

Abstract: A method of manufacturing an optoelectronic component includes providing a carrier with an upper side; arranging an optoelectronic semiconductor chip above the upper side of the carrier; arranging a casting material above the upper side of the carrier, wherein the optoelectronic semiconductor chip is embedded in the casting material, and the casting material forms a cast surface; simultaneously spraying particles and a further material onto the cast surface, wherein a mixture of the further material and the particles includes a proportion of the particles of 20 percent by weight to 60 percent by weight, a portion of the particles remains at the cast surface, and a topography is created at the cast surface.

Abstract: An optoelectronic component may be produced by providing a temporary carrier, applying a functional film to the temporary carrier, arranging optoelectronic elements within openings of the functional film in such a way that the mounting sides are facing towards the temporary carrier. The optoelectronic elements are thicker than the functional film such that the elements protrude beyond the functional film in a direction away from the temporary carrier. The method may further include applying a potting compound laterally around the elements and covering the function film and curing the potting compound to form a potting. The method may further include cutting between the openings to create individual optoelectronic components.

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 ?m.

Abstract: An optoelectronic component includes a housing having a cavity and a bottom, an optoelectronic semiconductor chip arranged on the bottom in the cavity, and a potting body arranged in the cavity, wherein a first region of the potting body has a higher content of filler than a second region of the potting body, and the first region of the potting body adjoins the bottom of the cavity.

Abstract: An arrangement includes a carrier; an optoelectronic component arranged on the carrier; and a material arranged on the carrier, wherein the carrier includes at least one structural element that hinders flow of the material in a flow direction, the structural element extends transversely to the flow direction, and the structural element has a rounding radius in a plane perpendicular to the transverse extent of the structural element less than 20 ?m.