Patents by Inventor Daniel Levi

Daniel Levi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250379840
    Abstract: A method and system for managing digital messaging communication on a user device, comprising a neural network-based speech recognition model and a decision-making algorithm. The system performs local analysis to identify and flag harmful or unauthorized content, incorporating real-time acoustic feature extraction and contextual data to refine content evaluation and transmission decisions.
    Type: Application
    Filed: August 26, 2025
    Publication date: December 11, 2025
    Inventor: Daniel LEVI
  • Patent number: 12464324
    Abstract: A voice communications system comprises a user interface with a push-to-talk (PTT) button, a communication module configured to transmit a signal from a first user to a second user upon activation of the PTT button without establishing a communication channel, and a receiver module that allows the second user to either accept the signal, thereby initiating a live audio stream, or ignore it. The system includes a voice streaming module for transmitting audio data while the PTT button is engaged and an artificial intelligence filtering module for real-time classification and moderation of the audio data, ensuring that the audio data is sent to the recipient only after approval by the filtering module. Additionally, the system can moderate pre-recorded digital messages prior to their transmission to a recipient.
    Type: Grant
    Filed: July 17, 2025
    Date of Patent: November 4, 2025
    Inventor: Daniel Levi
  • Publication number: 20220416067
    Abstract: A transistor comprises a semiconductor substrate and a barrier metal layer forming a Schottky barrier. One or more insulated gates may be positioned adjacent to an edge of the Schottky barrier. By applying a reverse bias voltage between the semiconductor substrate and the barrier metal, and applying a gate voltage between the one or more insulated gates and the barrier metal, a reverse bias current may be increased to a reverse bias conducting state. When the gate voltage is sufficient, the transistor may conduct current between the semiconductor substrate and the barrier metal. For example, voltages may be applied to an n-type substrate and an insulated gate (both relative to the barrier metal), and a current may flow from the semiconductor substrate to the barrier metal. The transistor may operate as a switch, a filter, a rectifier, an oscillator, or an amplifier.
    Type: Application
    Filed: June 23, 2022
    Publication date: December 29, 2022
    Inventors: Tal Havdala, Daniel Levi, David Ben-Bassat, Matan Zehavi, Bryon Roos Gomberg