Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: The invention relates to a method for making an imagery device comprising at least one matrix of pixels made of a photon detecting semiconducting material (43), deposited on a substrate in which electronic devices are integrated and with metallic surfaces (42), in which a material capable of improving bond of the semiconducting material is deposited on the metallic surfaces (42) only of this substrate before the semiconducting material (43) is deposited on the said substrate.

Abstract: The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallization of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallization processes or annealing.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The invention relates to a method for making an imagery device comprising at least one matrix of pixels made of a photon detecting semiconducting material (43), deposited on a substrate in which electronic devices are integrated and with metallic surfaces (42), in which a material capable of improving bond of the semiconducting material is deposited on the metallic surfaces (42) only of this substrate before the semiconducting material (43) is deposited on the said substrate.

Abstract: The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.

Abstract: The invention relates to the regeneration of an electrolysis bath for the production of I-III-VI<SB>Y</SB> compounds in thin layers, where y is approaching 2 and VI is an element including selenium, whereby selenium is regenerated in the form Se(IV) and/or with addition of oxygenated water to reoxidise the selenium in the bath to give the form Se(IV).

Abstract: The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

Abstract: The invention concerns a method for making thin-film CIGS which consists in: electrochemically depositing on a substrate a layer of stoichiometry close to CuInSe2; then rapidly annealing said layer from a light source with pulses of sufficient power to recrystallize CIS. Advantageously, the electrodeposited elements are premixed. Thus, after the deposition step, a homogeneous matrix is obtained which can support sudden temperature increases during the rapid annealing.

Abstract: Process for depositing a film of a metal oxide or of a metal hydroxide on a substrate in an electrochemical cell, wherein (i) the metal hydroxide is of formula M(OH).sub.x A.sub.y, M representing at least one metallic species in an oxidation state i chosen from the elements in Groups II and III of the Periodic Table, A being an anion whose number of charges is n, 0<x.ltoreq.i and x+ny=i,(ii) the electrochemical cell comprises (a) an electrode comprising the substrate, (b) a counterelectrode, (c) a reference electrode and (d) an electrolyte comprising a conducting solution comprising at least one salt of the metal M, the process comprising the steps of:dissolving oxygen in the electrolyte andimposing a cathode potential of less than the oxygen reduction potential and greater than the potential for deposition of the metal M in the electrolyte in question on the electrochemical cell.