Abstract: Described herein is a non-aqueous composition including (a) an organic solvent; and (b) at least one additive of formulae I or II where R1 is H R2 is selected from the group consisting of H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R3 is selected from the group consisting of R2, R4 is selected from the group consisting of C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R10, R12 are independently selected from the group consisting of C1 to C19 alkyl and C1 to C10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

Abstract: Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

Abstract: The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R? or NR?2, wherein at least one X is H, n is 1 or 2, and R and R? is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: The present invention is related to a process for coating anoxide material, said process comprising the following steps: (a) providing a particulate material selected from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides and lithiated layered nickel-cobalt-manganese oxides, (b) treating said cathode active material with a metal alkoxide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, and, optionally, repeating the sequence of steps (b) and (c), wherein steps (b) and (c) are carried out in a mixer that mechanically introduces mixing energy into the particulate material, or by way of a moving bed or fixed bed, and wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above normal pressure.

Abstract: A composition comprising a monomer of the general formula (M1) wherein M is a metal or semimetal of main group 3 or 4 of the periodic table; XM1, XM2 are each O; RM1, RM2 are the same or different and are each an —CRaRb—Ar—O—Rc; Ar is a C6 to C30 carbocyclic ring system; Ra, Rb are the same or different and are each H or C1 to C6 alkyl; Rc is C1-C22-alkyl, benzyl or phenyl; q according to the valency and charge of M is 0 or 1; XM3, XM4 are the same or different and are each O, C6 to C10 aryl, or —CH2—; RM3, RM4 are the same or different and are each RM1, H, C1-C22 alkyl, or a polymer selected from a polyalkylene, a polysiloxane, or a polyether.

Abstract: The invention relates to a composition for selectively etching a layer comprising a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition comprising: (a) an oxidizing agent, (b) an acid selected from an inorganic acid and an organic acid, 10 (c) an etchant comprising a source of fluoride ions, (d) a polyvinylpyrrolidone (PVP), and (e) water.

Abstract: Described herein is a non-aqueous composition including (a) an organic solvent, and (b) at least one additive of formulae I, where R1, R2, R3, and R4 are independently selected from C1 to C10 alkyl, C1 to C11 alkylcarbonyl, C6 to C12 aryl, C7 to C14 alkylaryl, and C7 to C14 arylalkyl; and n is 0 or 1.

Abstract: Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II where R1 is H R2 is selected from H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R3 is selected from R2, R4 is selected from C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy, R10, R12 are independently selected from C1 to C10 alkyl and C1 to C10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

Abstract: A resin composition, comprising (a) at least one epoxy resin, and (b) at least one siloxane-type curing agent of formula C22 or C31 (C22) (C31) wherein the resin composition does essentially not contain any fluoride or bromide.

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Abstract: The invention relates to the use of a composition comprising a C1 to C6 alkanol and a carboxylic acid ester of formula (I) wherein R1 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; R2 is selected from a C1 to C6 alkyl, which may be unsubstituted or substituted by OH or F, and —X21—[O—X22]n—H; X21, X22 are independently selected from C1 to C6 alkandiyl, which may be unsubstituted or substituted by OH or F; n is an integer from 1 to 5. wherein, the C1 to C6 alkanol and the carboxylic acid ester are selected so as to form an azeotropic mixture and are present in an amount from 20% by weight below to 20% by weight above such azeotropic mixture.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

Abstract: Processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, a process of bringing a compound of general formula (I) into the gaseous or aerosol state Ln - - - M - - - Xm??(I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.

Abstract: The present invention is related to a process for coating anoxide material, said process comprising the following steps: (a) providing a particulate material selected from lithiated nickel-cobalt aluminum oxides, lithiated cobalt-manganese oxides and lithiated layered nickel-cobalt-manganese oxides, (b) treating said cathode active material with a metal alkoxide or metal amide or alkyl metal compound, (c) treating the material obtained in step (b) with moisture, and, optionally, repeating the sequence of steps (b) and (c), wherein steps (b) and (c) are carried out in a mixer that mechanically introduces mixing energy into the particulate material, or by way of a moving bed or fixed bed, and wherein steps (b) and (c) are carried out at a pressure that is in the range of from 5 mbar to 1 bar above normal pressure.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (la), (lb), (lc), (Id), (lla), (lib), (lie), or (lid) wherein A is O or NRN, R and RN is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, R1, R2, R3, and R4 is hydrogen, an alkyl group, an alkenyl group, an aryl group, a silyl group, or an ester group, and E is nothing, oxygen, methylene, ethylene, or 1,3-propylene.

Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a ?-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.