Patents by Inventor Daniel Lubzens

Daniel Lubzens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making self-aligned metal gate field effect transistors
    Patent number: 4534103
    Abstract: A metal gate field effect transistor has its source and drain located on one major surface of a gallium arsenide layer, while its gate electrode forms a Schottky barrier contact to an opposed major surface of the layer in a self-aligned relationship to the source and drain.
    Type: Grant
    Filed: June 25, 1982
    Date of Patent: August 13, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Alfred Y. Cho, Bernard Glance, Daniel Lubzens, Martin V. Schneider