Patents by Inventor Daniel M. Makowiecki

Daniel M. Makowiecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5381944
    Abstract: The joining technique requires no external heat source and generates very little heat during joining. It involves the reaction of thin multilayered films deposited on faying surfaces to create a stable compound that functions as an intermediate or braze material in order to create a high strength bond. While high temperatures are reached in the reaction of the multilayer film, very little heat is generated because the films are very thin. It is essentially a room temperature joining process.
    Type: Grant
    Filed: November 4, 1993
    Date of Patent: January 17, 1995
    Assignee: The Regents of the University of California
    Inventors: Daniel M. Makowiecki, Richard M. Bionta
  • Patent number: 5382342
    Abstract: A process for fabricating high efficiency x-ray lenses that operate in the 0.5-4.0 keV region suitable for use in biological imaging, surface science, and x-ray lithography of integrated circuits. The gradient index x-ray optics fabrication process broadly involves co-sputtering multi-layers of film on a wire, followed by slicing and mounting on block, and then ion beam thinning to a thickness determined by periodic testing for efficiency. The process enables the fabrication of transmissive gradient index x-ray optics for the 0.5-4.0 keV energy range. This process allows the fabrication of optical elements for the next generation of imaging and x-ray lithography instruments m the soft x-ray region.
    Type: Grant
    Filed: January 14, 1993
    Date of Patent: January 17, 1995
    Assignee: The United States of America as represented by the Department of Energy
    Inventors: Richard M. Bionta, Daniel M. Makowiecki, Kenneth M. Skulina
  • Patent number: 5333726
    Abstract: A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.
    Type: Grant
    Filed: January 15, 1993
    Date of Patent: August 2, 1994
    Assignee: Regents of the University of California
    Inventors: Daniel M. Makowiecki, Mark A. McKernan, R. Fred Grabner, Philip B. Ramsey
  • Patent number: 5286361
    Abstract: An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.
    Type: Grant
    Filed: October 19, 1992
    Date of Patent: February 15, 1994
    Assignee: Regents of the University of California
    Inventors: Daniel M. Makowiecki, Mark A. McKernan
  • Patent number: 5284539
    Abstract: Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: February 8, 1994
    Assignee: Regents of the University of California
    Inventors: Mark A. McKernan, Craig S. Alford, Daniel M. Makowiecki, Chih-Wen Chen
  • Patent number: 5203977
    Abstract: A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: April 20, 1993
    Assignee: Regents of the University of California
    Inventors: Daniel M. Makowiecki, Alan F. Jankowski