Patents by Inventor Daniel M. Potrepka

Daniel M. Potrepka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200224312
    Abstract: A method of depositing a thin film of lead titanate (PTO), lead zirconate (PZO) or lead zirconate titanate (PZT) comprising depositing a PTO, PZO or PZT layer upon a substrate whereby growth occurs primarily due to self-limited surface chemisorption of pulsed chemical vapor, and annealing the PTO, PZO, or PZT layer and substrate.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 16, 2020
    Inventors: Nicholas A. Strnad, Daniel M. Potrepka, Ronald G. Polcawich
  • Patent number: 10266936
    Abstract: A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO2 or PbxTi1-xO3; sputter depositing textured lead zirconate titanate PbZrxTi1-xO3 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: April 23, 2019
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Daniel M. Potrepka, James R. Mulcahy, Ronald G. Polcawich
  • Patent number: 9761785
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: September 12, 2017
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Glen R Fox, Ronald G. Polcawich, Daniel M Potrepka, Luz M Sanchez
  • Publication number: 20160254439
    Abstract: A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO2 or PbxTi1-xO3; sputter depositing textured lead zirconate titanate PbZrxTi1-x03 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.
    Type: Application
    Filed: March 4, 2016
    Publication date: September 1, 2016
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Daniel M. Potrepka, James R. Mulcahy, Ronald G. Polcawich
  • Patent number: 9013191
    Abstract: A method and apparatus for obtaining dielectric constant and other measurements of a sample, comprising an open cavity resonator; a microwave energy generator for creating a resonating microwave in the open cavity resonator; a predetermined dielectric material having a high dielectric constant in the range of 2 to 100,000 substantially filling the region in which a microwave resonates; the dielectric material adapted to receive a sample for measurement of the dielectric properties of the sample; whereby during operation the resonating microwave beam is substantially immersed in the predetermined dielectric material such that the effective electrical spot size and beam cross-section along the cylindrical axis of the resonating microwave is reduced as a function of the inverse of the square root of the predetermined dielectric material dielectric constant. The dielectric constant or loss tangent of the sample may be determined based upon the change in the cavity's resonant frequency modes.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: April 21, 2015
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Daniel M. Potrepka, Steven C. Tidrow
  • Patent number: 8866367
    Abstract: A method for forming an electrical device having a {100}-textured platinum electrode comprising: depositing a textured metal thin film onto a substrate; thermally oxidizing the metal thin film by annealing to convert it to a rocksalt structure oxide with a {100}-texture; depositing a platinum film layer; depositing a ferroelectric film. An electrical device comprising a substrate; a textured layer formed on the substrate comprising metal oxide having a rocksalt structure; a first electrode film layer having a crystallographic texture acting as a template; and at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the first electrode film layer whereby the rocksalt structure of the textured layer facilitates the growth of the first electrode film layer with a {100} orientation which forms a template for the epitaxial deposition of the ferroelectric layer such that the ferroelectric layer is formed with an {001} orientation.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: October 21, 2014
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka
  • Publication number: 20140265734
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Application
    Filed: March 19, 2014
    Publication date: September 18, 2014
    Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I
    Inventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
  • Publication number: 20130093288
    Abstract: A method for forming an electrical device having a {100}-textured platinum electrode comprising: depositing a textured metal thin film onto a substrate; thermally oxidizing the metal thin film by annealing to convert it to a rocksalt structure oxide with a {100}-texture; depositing a platinum film layer; depositing a ferroelectric film. An electrical device comprising a substrate; a textured layer formed on the substrate comprising metal oxide having a rocksalt structure; a first electrode film layer having a crystallographic texture acting as a template; and at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the first electrode film layer whereby the rocksalt structure of the textured layer facilitates the growth of the first electrode film layer with a {100} orientation which forms a template for the epitaxial deposition of the ferroelectric layer such that the ferroelectric layer is formed with an {001} orientation.
    Type: Application
    Filed: June 5, 2012
    Publication date: April 18, 2013
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: Glen R. Fox, Ronald G. Polcawich, Daniel M. Potrepka
  • Publication number: 20130093290
    Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.
    Type: Application
    Filed: March 30, 2012
    Publication date: April 18, 2013
    Applicant: U.S. Government as represented by the Secretary of the Army
    Inventors: GLEN R. FOX, Ronald G. Polcawich, Daniel M. Potrepka, Luz M. Sanchez
  • Publication number: 20130063158
    Abstract: A method and apparatus for obtaining dielectric constant and other measurements of a sample, comprising an open cavity resonator; a microwave energy generator for creating a resonating microwave in the open cavity resonator; a predetermined dielectric material having a high dielectric constant in the range of 2 to 100,000 substantially filling the region in which a microwave resonates; the dielectric material adapted to receive a sample for measurement of the dielectric properties of the sample; whereby during operation the resonating microwave beam is substantially immersed in the predetermined dielectric material such that the effective electrical spot size and beam cross-section along the cylindrical axis of the resonating microwave is reduced as a function of the inverse of the square root of the predetermined dielectric material dielectric constant. The dielectric constant or loss tangent of the sample may be determined based upon the change in the cavity's resonant frequency modes.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 14, 2013
    Applicant: U.S Government as represented by the Secretary of Army
    Inventors: DANIEL M. POTREPKA, STEVEN C. TIDROW
  • Patent number: 7087186
    Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: August 8, 2006
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Steven C. Tidrow, Daniel M. Potrepka, Arthur Tauber
  • Patent number: 6875369
    Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric lead-based perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: April 5, 2005
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Steven C. Tidrow, Daniel M. Potrepka, Arthur Tauber
  • Patent number: 6864690
    Abstract: Apparatus for the precise positioning of a sample of dielectric material into a cavity resonator system for obtaining dielectric constant, and other measurements. Precision micrometer drive units are provided to move the sample about a vertical axis, to tilt the sample, and to move the sample in X, Y and Z directions. The drive units are positioned on a bearing slide for ease of sample positioning into and out of the cavity. Selected drive units are controllable from a remote location so that the apparatus may be utilized in an environmental chamber whereby measurements may be accomplished without opening the chamber after each measurement. All components of the resonator system, positioning units, cables, etc. are chosen such that they are operable over the desired temperature range of operation.
    Type: Grant
    Filed: March 5, 2002
    Date of Patent: March 8, 2005
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Steven C. Tidrow, Daniel M. Potrepka
  • Patent number: 6818144
    Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric materials comprising a charge compensated lead-based perovskite having the general formula ABO3 is provided, which has reasonably low and fairly temperature insensitive dielectric constants over operating temperatures of −80° C. to 100° C., reasonable loss tangents (<˜10−1), and high tunability. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: November 16, 2004
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Steven C. Tidrow, Daniel M. Potrepka, Arthur Tauber
  • Patent number: 5173606
    Abstract: A superconductor electromagnetic radiation detector includes a superconductor composite (2) that has a matrix (6) transparent to electromagnetic radiation wavelengths to be detected and a plurality of superconductor particles (4) dispersed in the matrix (6). The detector also includes remote means for detecting a physical response of the superconductor particles (4) to electromagnetic radiation. The physical response of the superconductor particles (4) to electromagnetic radiation indicates the presence of electromagnetic radiation. A method of detecting electromagnetic radiation includes illuminating a plurality of superconductor particles (4) dispersed in the matrix (6) of a superconductor composite (2) with electromagnetic radiation and remotely detecting a physical response to the superconductor particles (4) to the electromagnetic radiation.
    Type: Grant
    Filed: September 3, 1991
    Date of Patent: December 22, 1992
    Assignee: United Technologies Corporation
    Inventors: Bernard R. Weinberger, Daniel M. Potrepka, Lahmer Lynds, Jr.