Abstract: An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength ?max.

Abstract: An infrared (IR) detector comprises a radio frequency (RF) resonator including a bottom electrode to provide acoustic excitation, a piezoelectric layer connected to the bottom electrode and suspended over a cavity defined within a semiconductor substrate, and a top layer comprising a mid-IR metamaterial and which is connected to the piezoelectric layer of the RF resonator. The top layer and the piezoelectric layer are sized to impedance match with a particular IR wavelength, to minimize reflection and maximize absorption of a particular IR wavelength, and thus make the top layer polarization sensitive to the particular IR wavelength.

Abstract: An infrared (IR) detector comprises a radio frequency (RF) resonator including a bottom electrode to provide acoustic excitation, a piezoelectric layer connected to the bottom electrode and suspended over a cavity defined within a semiconductor substrate, and a top layer comprising a mid-IR metamaterial and which is connected to the piezoelectric layer of the RF resonator. The top layer and the piezoelectric layer are sized to impedance match with a particular IR wavelength, to minimize reflection and maximize absorption of a particular IR wavelength, and thus make the top layer polarization sensitive to the particular IR wavelength.

Abstract: An optoelectronic device includes an etched body comprising a buried metal contact layer on a top surface of a semiconductor structure, which comprises one or more semiconductor layers. The buried metal contact layer includes an arrangement of holes therein. A plurality of nanopillar structures protrude from the top surface of the semiconductor structure and pass through the arrangement of holes. Each nanopillar structure is surrounded at a base thereof by a portion of the buried metal contact layer. When the etched body is exposed to incident radiation having a wavelength in the range from about 300 nm to about 10 microns, at least about 50% of the incident radiation is transmitted through the etched body at a peak transmission wavelength ?max.