Abstract: Example embodiments relate to digital RF amplifiers. One example digital RF amplifier includes a driver having a plurality of outputs and being configured to individually set a signal level at the outputs either to an inactive or active level in response to a digital input signal. The RF amplifier also includes a transistor configured to output an analog RF signal at a transistor output. The transistor includes a plurality of transistor cells, each including a control terminal, an output terminal, and a common terminal. The transistor also includes a plurality of transistor inputs, each transistor input being electrically connected to the control terminal of at least one transistor cell. The transistor inputs are mutually electrically isolated. Each transistor input is connected to a different output of the driver. The transistor output is electrically connected to the output terminals of the plurality of transistor cells. The transistor is a circular transistor.

Abstract: Example embodiments relate to RF amplifier packages. One example RF amplifier package includes an input terminal, an output terminal, a substrate, a first DC blocking capacitor having a first terminal and a grounded second terminal, and a second conductor die mounted on the substrate. The semiconductor die includes a semiconductor substrate, an RE power field-effect transistor (FET) integrated on the semiconductor substrate, a gate bondbar, a first drain bondbar, a second drain bondbar, and a plurality of first bondwires connecting the second drain bondbar to the first terminal of the first DC blocking capacitor. The RF power FET includes a plurality of gate fingers that are electrically connected to the gate bondbar and that each extend from the gate bondbar towards the first drain bondbar and underneath the second drain bondbar, a first set of drain fingers, and a second set of drain fingers.