Abstract: A system and method for generating arsine are disclosed. The system may include a shell having a top interior surface. The system may also include a cathode-anode assembly positioned in the shell and forming an elongated structure substantially parallel to the top surface. The cathode-anode assembly may include a first electrode and a second electrode surrounding the first electrode and forming a gap therebetween. The second electrode may include a plurality of channels along a length of the second electrode. The plurality of channels may allow circulation of electrolyte within and around at least a portion of the cathode-anode assembly and allow gases generated in response to current applied to the cathode-anode assembly to escape from the cathode-anode assembly. Such gases may be used as precursor gases for a high-volume metal-organic chemical vapor deposition (MOCVD) operation.

Abstract: A system and method for generating arsine are disclosed. The system may include a shell having a top interior surface. The system may also include a cathode-anode assembly positioned in the shell and forming an elongated structure substantially parallel to the top surface. The cathode-anode assembly may include a first electrode and a second electrode surrounding the first electrode and forming a gap therebetween. The second electrode may include a plurality of channels along a length of the second electrode. The plurality of channels may allow circulation of electrolyte within and around at least a portion of the cathode-anode assembly and allow gases generated in response to current applied to the cathode-anode assembly to escape from the cathode-anode assembly. Such gases may be used as precursor gases for a high-volume metal-organic chemical vapor deposition (MOCVD) operation.

Abstract: A system and method for generating gas are disclosed. The system may include one or more current sources to generate an electrical current. The system may also include one or more cathode-anode assemblies electrically coupled with the one or more current sources. The one or more cathode-anode assemblies may generate a gas in response to receiving the electrical current from the one or more current sources. Each of the one or more cathode-anode assemblies may include a first electrode and a second electrode forming a concentric cylindrical structure, wherein the second electrode surrounds the first electrode and forms a gap between the second electrode and the first electrode. The system may also include electrolyte provided in the gap.

Abstract: The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.