Abstract: A uniform bridge gradient (UBG) time-of-flight (ToF) photodiode block is described, such as for integration with image sensor pixels. The UBG ToF photodiode block can be part of a UBG ToF pixel, and an image sensor can include an array of such pixels. Each UGB ToF photosensor block has multiple taps for selective activation, and a photodiode region designed for complete and rapid transit of photocarriers, as they are generated, via the multiple taps. Embodiments of the photodiode region include a photodiode-defining implant, a relatively shallow first bridging implant, and relatively deep second bridging implant. The bridging implants provide lateral bridging with a uniform doping gradient near and across the multiple taps.

Abstract: A system is provided for time delay integration in complementary metal oxide semiconductor imaging sensors, the system comprising: a two dimensional parallel charge transfer structure comprising at least one column of CMOS Image sensor pinned photodiodes; each the diode in the column being connected to the next the diode by a two phase transfer gate, each the transfer gate having a barrier and a well configured such that a flow of charge in the column is unidirectional.

Abstract: A digital imaging system is provided with direct view of an object, having: an optical element configured to allow visible light to pass therethrough to a user's eye and to redirect light of non-visible wavelengths away from the user's eye; a display disposed between the user's eye and the object; a digital camera mounted outside a field of view of the user's eye and configured to obtaining imaging data from the light of non-visible wavelength; a redirection optic disposed so as to redirect the light of non-visible wavelength to the digital camera; and an image processor configured to process the imaging data from the digital camera and output the data to the display such that an image generated from the imaging data from the digital camera overlays an image produced by the impingement of visible light on the user's eye following the visible light's passing through the optical element.

Abstract: Binnable time-of-flight (ToF) pixels are described, such as for integration with image sensor pixels. Each binnable ToF pixel includes a central dump gate and sub-pixels that are nominally mirror-symmetric and identical around the dump gate. Each sub-pixel includes a photodiode region (or a respective portion of a photodiode region), a storage gate, a storage region, a transfer gate, and a floating diffusion (FD) region. In an array, the binnable ToF pixels are arranged to share FD regions with other binnable ToF pixels of the array. In an un-binned mode, each sub-pixel can integrate photocharge in its storage region until it is time for readout, at which time the photocharges can be transferred to its respective floating diffusion region for individualized readout. In a binned mode, sub-pixels can integrate photocharge directly in their FD regions, which facilitates charge binning of integrated photocharge from all sub-pixels sharing the same FD region.

Abstract: Binnable time-of-flight (ToF) pixels are described, such as for integration with image sensor pixels. Each binnable ToF pixel includes a central dump gate and sub-pixels that are nominally mirror-symmetric and identical around the dump gate. Each sub-pixel includes a photodiode region (or a respective portion of a photodiode region), a storage gate, a storage region, a transfer gate, and a floating diffusion (FD) region. In an array, the binnable ToF pixels are arranged to share FD regions with other binnable ToF pixels of the array. In an un-binned mode, each sub-pixel can integrate photocharge in its storage region until it is time for readout, at which time the photocharges can be transferred to its respective floating diffusion region for individualized readout. In a binned mode, sub-pixels can integrate photocharge directly in their FD regions, which facilitates charge binning of integrated photocharge from all sub-pixels sharing the same FD region.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: A digital imaging system is provided with direct view of an object, having: an optical element configured to allow visible light to pass therethrough to a user's eye and to redirect light of non-visible wavelengths away from the user's eye; a display disposed between the user's eye and the object; a digital camera mounted outside a field of view of the user's eye and configured to obtaining imaging data from the light of non-visible wavelength; a redirection optic disposed so as to redirect the light of non-visible wavelength to the digital camera; and an image processor configured to process the imaging data from the digital camera and output the data to the display such that an image generated from the imaging data from the digital camera overlays an image produced by the impingement of visible light on the user's eye following the visible light's passing through the optical element.

Abstract: A uniform bridge gradient (UBG) time-of-flight (ToF) photodiode block is described, such as for integration with image sensor pixels. The UBG ToF photodiode block can be part of a UBG ToF pixel, and an image sensor can include an array of such pixels. Each UGB ToF photosensor block has multiple taps for selective activation, and a photodiode region designed for complete and rapid transit of photocarriers, as they are generated, via the multiple taps. Embodiments of the photodiode region include a photodiode-defining implant, a relatively shallow first bridging implant, and relatively deep second bridging implant. The bridging implants provide lateral bridging with a uniform doping gradient near and across the multiple taps.

Abstract: A system is provided for time delay integration in complementary metal oxide semiconductor imaging sensors, the system comprising: a two dimensional parallel charge transfer structure comprising at least one column of CMOS Image sensor pinned photodiodes; each the diode in the column being connected to the next the diode by a two phase transfer gate, each the transfer gate having a barrier and a well configured such that a flow of charge in the column is unidirectional.

Abstract: Devices and methods of minimizing the temporal error between pixels or groups of pixels on a focal plane array involving, on a focal plane array comprising at least two pixels or groups of pixels, at least one counter or ramp, and at least one trigger: determining the timing error associated with a time stamp associated with the at least two pixels or groups of pixels; storing the timing error associated with the at least two pixels or groups of pixels and the pixel or pixel group location; and using the stored timing error and pixel or pixel group location to correct subsequent time stamps associated with the at least two pixels or groups of pixels, wherein the timing error corresponds to a systematic error between the trigger and the counter or ramp value due to the location of a pixel or group of pixels on the focal plane array.

Abstract: Devices and methods of minimizing the temporal error between pixels or groups of pixels on a focal plane array involving, on a focal plane array comprising at least two pixels or groups of pixels, at least one counter or ramp, and at least one trigger: determining the timing error associated with a time stamp associated with the at least two pixels or groups of pixels; storing the timing error associated with the at least two pixels or groups of pixels and the pixel or pixel group location; and using the stored timing error and pixel or pixel group location to correct subsequent time stamps associated with the at least two pixels or groups of pixels, wherein the timing error corresponds to a systematic error between the trigger and the counter or ramp value due to the location of a pixel or group of pixels on the focal plane array.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: A system for low light level image sensing is provided having: A photodiode; a transfer gate disposed in a center of the photodiode; an active gate disposed surrounded by the transfer gate; a plurality of microlenses, each microlens being disposed over a portion of the photodiode and directing light away from the transfer gate towards the photodiode.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame-based capture circuit is a capacitive transimpedance amplifier circuit, and wherein the event-driven capture circuit is a linear asynchronous event representation circuit.

Abstract: A hybrid frame-based and event driven pixel, the pixel comprising a frame-based capture circuit, an event-driven capture circuit, and a photodiode in electrical communication with both the frame-based and event-driven capture circuits, wherein the frame based capture circuit is a buffered direct injection circuit, and wherein the event-driven capture circuit is a dynamic vision system circuit.

Abstract: A system for low light level image sensing is provided having: A photodiode; a transfer gate disposed in a center of the photodiode; an active gate disposed surrounded by the transfer gate; a plurality of microlenses, each microlens being disposed over a portion of the photodiode and directing light away from the transfer gate towards the photodiode

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: A low light level imaging apparatus comprising an image sensor having a plurality of pixels, where the image sensor is configured to readout in an interlaced manner to a display that allows for real-time viewing of image sensor data by a user or users, where some users may be remote from the low light level imaging apparatus, in the form of a video stream.