Patents by Inventor Daniel Morvan

Daniel Morvan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190136341
    Abstract: The invention relates to a process for selectively and continuously extracting a series of desired species from a matrix, comprising the steps of:—injecting a plasma (310) in an extraction chamber by means of a plasma torch,—continuously monitoring (320) the excited elements extracted from the matrix and contained in the plasma by optical emission spectroscopy, and for each species of the series,—setting a distance (330) between the support and the plasma torch, and the composition of the injected plasma as a function of the monitored excited elements so that only one desired species of the series of species is being extracted from the matrix under molecular form, and—providing (400) a plate in the extraction chamber, exterior to the plasma, causing collection of molecules comprising said desired species by deposition onto the surface of the plate.
    Type: Application
    Filed: June 8, 2017
    Publication date: May 9, 2019
    Applicants: Paris Sciences Et Lettres - Quartier Latin, Centre National de la Recherche Scientifique (CNRS)
    Inventors: Frédéric Rousseau, Olivier Lesage, Jonathan Cramer, Frédéric Prima, Daniel Morvan
  • Patent number: 10267151
    Abstract: The invention relates to a method for repairing a thermal barrier of a component comprising a substrate coated with such a thermal barrier, said substrate being made of a high-performance alloy, said thermal barrier being adhered to the alloy and having lower thermal conductivity than the alloy, the thermal barrier including at least one ceramic, one region of the thermal barrier being a region to be repaired, wherein said method includes the following steps: a) defining the region to be repaired, using a mask which protects the other regions of the thermal barrier; b) injecting a carrier gas loaded with droplets of ceramic precursor into a plasma discharge inside a plasma chamber of a plasma reactor containing the component to be repaired, while making the concentration of ceramic precursor in the carrier gas dependent on at least one parameter of the reactor selected from among: the pressure of the plasma chamber, the power of the plasma generator and the diameter of the precursor droplets, in order to cont
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: April 23, 2019
    Assignee: Office National D'Etudes et de Recherches Aerospatiales
    Inventors: Marie-Pierre Bacos, Odile Lavigne, Catherine Rio, Marie-Helene Vidal-Setif, Frederic Rousseau, Daniel Morvan
  • Patent number: 10100396
    Abstract: The invention relates to a method and system for forming a layer of oxide on a pervious component made of a material or a stack of materials that are stable at 400° C., said component including an outer surface to be coated and at least one pore with a diameter of 50 to 1000 ?m leading onto said outer surface.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: October 16, 2018
    Assignee: Office National D'Etudes et de Recherches Aerospatiales
    Inventors: Marie-Pierre Bacos, Frederic Rousseau, Daniel Morvan
  • Patent number: 9933368
    Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: April 3, 2018
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)
    Inventors: Malek Benmansour, Rafik Benrabbah, Jean-Paul Garandet, Daniel Morvan
  • Publication number: 20170074800
    Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.
    Type: Application
    Filed: May 20, 2015
    Publication date: March 16, 2017
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)
    Inventors: Malek BENMANSOUR, Rafik BENRABBAH, Jean-Paul GARANDET, Daniel MORVAN
  • Publication number: 20170044901
    Abstract: The invention relates to a method for repairing a thermal barrier of a component comprising a substrate coated with such a thermal barrier, said substrate being made of a high-performance alloy, said thermal barrier being adhered to the alloy and having lower thermal conductivity than the alloy, the thermal barrier including at least one ceramic, one region of the thermal barrier being a region to be repaired, wherein said method includes the following steps: a) defining the region to be repaired, using a mask which protects the other regions of the thermal barrier; b) injecting a carrier gas loaded with droplets of ceramic precursor into a plasma discharge inside a plasma chamber of a plasma reactor containing the component to be repaired, while making the concentration of ceramic precursor in the carrier gas dependent on at least one parameter of the reactor selected from among: the pressure of the plasma chamber, the power of the plasma generator and the diameter of the precursor droplets, in order to cont
    Type: Application
    Filed: December 1, 2014
    Publication date: February 16, 2017
    Inventors: Marie-Pierre Bacos, Odile Lavigne, Catherine Rio, Marie-Helene Vidal-Setif, Frederic Rousseau, Daniel Morvan
  • Publication number: 20170002452
    Abstract: The invention relates to a method and system for forming a layer of oxide on a pervious component made of a material or a stack of materials that are stable at 400° C., said component including an outer surface to be coated and at least one pore with a diameter of 50 to 1000 ?m leading onto said outer surface.
    Type: Application
    Filed: December 1, 2014
    Publication date: January 5, 2017
    Inventors: Marie-Pierre Bacos, Frederic Rousseau, Daniel Morvan
  • Publication number: 20150299897
    Abstract: The invention relates to a method for forming a crystallised silicon layer having a crystallite size higher than or equal to 100 ?m, by the epitaxial growth in a vapour phase, on the surface of at least one silicon substrate, including at least the steps: (i) providing a silicon substrate having a particle size higher than or equal to 100 ?m and including a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming the silicon layer on the surface of the substrate heated to a temperature of between 1000 and 1300° C., by decomposition of at least one silicon precursor by unit of an inductive plasma torch, the surface of the substrate for supporting the silicon layer being positioned close to the outlet of the plasma torch in step (ii).
    Type: Application
    Filed: September 23, 2013
    Publication date: October 22, 2015
    Inventors: Malek BENMANSOUR, Jean-Paul GARANDET, Daniel MORVAN
  • Patent number: 4399116
    Abstract: Boron is removed from silicon by zone melting purification. A jet of hot plasma obtained by high frequency excitation is directed on a zone of a bar of silicon to be purified. The plasma is formed from a mixture of a plasma-producing gas, such as argon, and an amount of oxygen which is sufficiently low to avoid oxidization of silicon.
    Type: Grant
    Filed: July 28, 1981
    Date of Patent: August 16, 1983
    Assignee: Electricite de France (Service National)
    Inventors: Jacques Amouroux, Daniel Morvan