Patents by Inventor Daniel N. Fine

Daniel N. Fine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Post plasma ashing wafer cleaning formulation
    Patent number: 7534752
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.
    Type: Grant
    Filed: September 17, 2001
    Date of Patent: May 19, 2009
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Thomas J. Kloffenstein, Stephen A. Fine, legal representative, Daniel N. Fine
  • Post plasma ashing wafer cleaning formulation
    Publication number: 20020068685
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.
    Type: Application
    Filed: September 17, 2001
    Publication date: June 6, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Thomas J. Kloffenstein, Daniel N. Fine, Stephen Q. Fine
  • Post plasma ashing wafer cleaning formulation
    Patent number: 6323168
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: chelating agent 1-15% water 25-99%  polar organic solvent 0-60% In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).
    Type: Grant
    Filed: July 3, 1996
    Date of Patent: November 27, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Thomas J. Kloffenstein, Daniel N. Fine
  • Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates
    Patent number: 6224785
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof;  1-21% an organic amine or mixture of two amines; 20-55% water; 23-50% a metal chelating agent or mixture of chelating agents.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: May 1, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Daniel N. Fine, Stephen A. Fine