Abstract: An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Abstract: A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Abstract: A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Abstract: A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Abstract: A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Abstract: An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Abstract: An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Abstract: A LIDAR system includes a static monolithic LIDAR transceiver, a collimating optic, and a first rotatable wedge prism. The static monolithic LIDAR transceiver is configured to transmit a laser beam and receive reflected laser light from a first target object. The collimating optic is configured to narrow the transmitted laser beam to produce a collimated laser beam. The first rotatable wedge prism is configured to steer the collimated laser beam in a direction of the first target object based on the first rotatable wedge prism being in a first position.

Abstract: An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Abstract: An integrated circuit may be formed by forming an isolation recess in a single-crystal silicon-based substrate. Sidewall insulators are formed on sidewalls of the isolation recess. Thermal oxide is formed at a bottom surface of the isolation recess to provide a buried isolation layer, which does not extend up the sidewall insulators. A single-crystal silicon-based semiconductor layer is formed over the buried isolation layer and planarized to be substantially coplanar with the substrate adjacent to the isolation recess, thus forming an isolated semiconductor layer over the buried isolation layer. The isolated semiconductor layer is laterally separated from the substrate.

Abstract: An integrated circuit is formed by forming an isolation recess in a single crystal substrate which includes silicon, filling the isolation recess with isolation dielectric material, and planarizing the isolation dielectric material to be coplanar with the top surface of the substrate to form a buried isolation layer. A non-selective epitaxial process forms single-crystalline silicon-based semiconductor material on exposed areas of the substrate and polycrystalline or amorphous silicon-based material on the buried isolation layer. A cap layer is formed over the epitaxial silicon-based material, and a radiantly-induced recrystallization process causes the polycrystalline or amorphous silicon-based material to form single-crystalline semiconductor over the buried isolation layer.

Abstract: An integrated circuit is formed by forming an isolation mesa over a single crystal substrate which includes silicon, and forming a first epitaxial layer on the substrate by a selective epitaxial process so that a top surface of the first epitaxial layer is coplanar with the top surface of the isolation mesa. A non-selective epitaxial process forms single-crystalline silicon-based semiconductor material on the first epitaxial layer and non-crystalline silicon-based material on the isolation mesa. A cap layer is formed over the second epitaxial layer, and a radiantly-induced recrystallization process causes the non-crystalline silicon-based material to form single-crystalline semiconductor over the isolation mesa.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

Abstract: An integrated circuit is formed by forming an isolation mesa over a single crystal substrate which includes silicon, and forming a first epitaxial layer on the substrate by a selective epitaxial process so that a top surface of the first epitaxial layer is coplanar with the top surface of the isolation mesa. A non-selective epitaxial process forms single-crystalline silicon-based semiconductor material on the first epitaxial layer and non-crystalline silicon-based material on the isolation mesa. A cap layer is formed over the second epitaxial layer, and a radiantly-induced recrystallization process causes the non-crystalline silicon-based material to form single-crystalline semiconductor over the isolation mesa.

Abstract: An integrated circuit is formed by forming an isolation recess in a single crystal substrate which includes silicon, filling the isolation recess with isolation dielectric material, and planarizing the isolation dielectric material to be coplanar with the top surface of the substrate to form a buried isolation layer. A non-selective epitaxial process forms single-crystalline silicon-based semiconductor material on exposed areas of the substrate and polycrystalline or amorphous silicon-based material on the buried isolation layer. A cap layer is formed over the epitaxial silicon-based material, and a radiantly-induced recrystallization process causes the polycrystalline or amorphous silicon-based material to form single-crystalline semiconductor over the buried isolation layer.

Abstract: An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.