Abstract: Method for producing a silicon ingot comprising the following steps: providing a container for receiving a silicon melt with a base wall extending perpendicular to an axial direction and side walls, providing at least one flat monocrystalline seed crystal with an axial orientation selected from the group of <110>, <100> and <111> orientation, arranging the at least one seed crystal on the base wall of the container and directional solidification of a silicon melt in the container (2) to form a silicon ingot proceeding from the at least one seed crystal, wherein the axial orientation of the at least one seed crystal predetermines an axial orientation for the silicon ingot and wherein the at least one seed crystal is configured on the base wall of the container in such a way that a twin formation is avoided in an edge region adjoining the side walls.