Abstract: Various embodiments set forth systems and techniques for identifying issues associated with a domain name system (DNS) ecosystem. The techniques include receiving a first target domain name; identifying a plurality of DNS elements included in the DNS ecosystem that should be tested based on the first target domain name; performing one or more validation operations on the plurality of DNS elements based on the first target domain name to generate a first set of validation results; and identifying a first DNS issue associated with the first target domain name based on the first set of validation results.

Abstract: A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.

Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.

Abstract: A memory device includes a first electrode, a second electrode and a magnetic junction between the first and the second electrode. The magnetic junction includes a first magnetic structure that includes a first magnet including an alloy of cobalt and tungsten, and a second magnet above the first magnet. The first and the second magnets are separated by a non-magnetic spacer layer. The magnetic junction further includes a layer including a metal and oxygen on the first magnetic structure. The tunnel barrier layer has an <001> crystal texture. The magnetic junction further includes a third magnet on the tunnel barrier layer. The third magnet has a magnetization which can change in response to torque from a current tunneling through the tunnel barrier layer.

Abstract: A memory device includes a bottom electrode, a conductive layer such as an alloy including ruthenium and tungsten above the bottom electrode and a perpendicular magnetic tunnel junction (pMTJ) on the conductive layer. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet on the tunnel barrier. The memory device further includes a synthetic antiferromagnetic (SAF) structure that is ferromagnetically coupled with the fixed magnet to pin a magnetization of the fixed magnet. The conductive layer has a crystal texture which promotes high quality FCC <111> crystal texture in the SAF structure and improves perpendicular magnetic anisotropy of the fixed magnet.

Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.

Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.

Abstract: A method of modifying a particle that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S-ZM to form a substituted reactive intermediate [Y]a—X—(N—S-ZM)b, and reacting the particle with the substituted reactive intermediate [Y]a—X—(N—S-ZM)b to attach the substituted reactive intermediate to the surface of the particle to form a surface modified particle. The particle may comprise at least one of a dye particle, an inorganic pigment particle, an additive, or a combination thereof. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group. Y may be a halogen leaving group. N may be a nucleophilic group. S may be an organic group. ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and wherein if b is 2 or 3, each N—S-ZM can be the same or different.

Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each N—S—ZM can be the same or different.

Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each N—S—ZM can be the same or different.

Abstract: A method of producing a modified pigment by sulfonating a pigment and subsequently oxidizing the pigment. The modified pigment may have sulfonic acid and carboxyl surface modifying groups attached to the surface of the pigment. Charge balancing counterions such as alkali metals, alkaline earth metals and NR1R2R3H+, where R1, R2 and R3 are independently H or C1-C5 alkyl groups, may be associated with the surface modifying groups. The modified pigment is combined with water to produce a dispersion that can be used in such applications as coatings, paints, papers, adhesives, latexes, toners, textiles, fibers, plastics and inks.

Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X—[Y]n reactive group with a secondary compound N—S—ZM to form a substituted reactive intermediate [Y]a—X—(N—S—ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a—X—(N—S—ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each. N—S—ZM can be the same or different.

Abstract: A method of modifying a pigment that includes reacting a reactive compound having an X-[Y]n reactive group with a secondary compound N-S-ZM to form a substituted reactive intermediate [Y]aX-(N-S-ZM)b. A pigment is reacted with the substituted reactive intermediate [Y]a-X-(N-S-ZM)b to attach the substituted reactive intermediate to the surface of the pigment to form a surface modified pigment. X may be a sulfonyl, phosphoryl, or 1,3,5-triazinyl group, Y may be a halogen leaving group, N may be a basic nucleophilic group, S may be an organic group, and ZM may be an ionizable end group. Also, n is an integer between 1 and 3, b is an integer between 1 and 3, and a=n?b. When n is equal to or greater than b, and if b is 2 or 3, each. N-S-ZM can be the same or different.