Patents by Inventor Daniel Owen Clawson

Daniel Owen Clawson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6933025
    Abstract: A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.
    Type: Grant
    Filed: March 24, 2004
    Date of Patent: August 23, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Shyh-Nung Lin, Mark D. Menzie, Joe F. Sommers, Daniel Owen Clawson, Glen T. Mori, Lolita L. Sharp
  • Publication number: 20040180158
    Abstract: A component for a substrate processing chamber comprises a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating composed of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.
    Type: Application
    Filed: March 24, 2004
    Publication date: September 16, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Shyh-Nung Lin, Mark D. Menzie, Joe F. Sommers, Daniel Owen Clawson, Glen T. Mori, Lolita L. Sharp
  • Patent number: 6777045
    Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: August 17, 2004
    Assignee: Applied Materials Inc.
    Inventors: Shyh-Nung Lin, Mark D. Menzie, Joe F. Sommers, Daniel Owen Clawson, Glen T. Mori, Lolita L. Sharp
  • Publication number: 20030026917
    Abstract: A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.
    Type: Application
    Filed: June 27, 2001
    Publication date: February 6, 2003
    Inventors: Shyh-Nung Lin, Mark D. Menzie, Joe F. Sommers, Daniel Owen Clawson, Glen T. Mori, Lolita L. Sharp