Patents by Inventor Daniel P. Aubin

Daniel P. Aubin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
    Patent number: 5976761
    Abstract: A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.
    Type: Grant
    Filed: March 25, 1998
    Date of Patent: November 2, 1999
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dinesh N. Khanna, Sunit S. Dixit
  • Metal ion reduction in photoresist compositions by chelating ion exchange resin
    Patent number: 5962183
    Abstract: The present invention provides methods for producing a photoresist having a very low level of metal ions, utilizing a treated chelating ion exchange resins to make the neutral ammonium salt or acid form. A method is also provided for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: November 27, 1995
    Date of Patent: October 5, 1999
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Daniel P. Aubin
  • Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
    Patent number: 5853947
    Abstract: A photosensitive positive working photosensitive composition suitable for use as a photoresist, which comprises an admixture of at least one water insoluble, aqueous alkali soluble, film forming novolak resin; at least one o-diazonaphthoquinone photosensitizer; and a photoresist solvent mixture comprising a propylene glycol alkyl ether acetate and 3-methyl-3-methoxy butanol and process for producing such a composition.
    Type: Grant
    Filed: December 21, 1995
    Date of Patent: December 29, 1998
    Assignee: Clariant Finance (BVI) Limited
    Inventors: Stanley F. Wanat, M. Dalil Rahman, Dinesh N. Khanna, Daniel P. Aubin, Sunit S. Dixit
  • Process for producing surfactant having a low metal ion level and developer produced therefrom
    Patent number: 5750031
    Abstract: The present invention provides a process for producing a developer containing a surfactant which contains a very low level of metal ions.
    Type: Grant
    Filed: September 26, 1995
    Date of Patent: May 12, 1998
    Assignee: Clariant Finance (BVI) Limited
    Inventors: M. Dalil Rahman, Daniel P. Aubin
  • Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
    Patent number: 5739265
    Abstract: A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin having low metal ions, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a resin a photoresist composition of superior quality containing such novolak resin, and a method for producing a semiconductor device using such photoresist composition.
    Type: Grant
    Filed: September 20, 1995
    Date of Patent: April 14, 1998
    Assignee: Clariant Finance (BVI) Ltd.
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dinesh N. Khanna, Sunit S. Dixit
  • Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
    Patent number: 5693749
    Abstract: A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin fraction having a low metal ion content, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a photoresist compositions containing such a novolak resin, and a method for producing a semiconductor device using such a photoresist composition.
    Type: Grant
    Filed: September 20, 1995
    Date of Patent: December 2, 1997
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dinesh N. Khanna, Sunit S. Dixit
  • Method of using a Lewis base to control molecular weight of novolak resins
    Patent number: 5688893
    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: November 18, 1997
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dana L. Durham, Ralph R. Dammel
  • Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
    Patent number: 5665517
    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and a very low level of metal ions, utilizing a solid acid condensation catalyst. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: January 11, 1996
    Date of Patent: September 9, 1997
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Elaine G. Kokinda, Dana L. Durham
  • Low metal ion containing 4,4'-[1-[4-[1-(4-Hydroxyphenyl)-1-methylethyl]phenyl]ethylidene]bisphe nol and photoresist compositions therefrom
    Patent number: 5656413
    Abstract: The present invention provides methods for producing TPPA having low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such TPPA for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: September 28, 1995
    Date of Patent: August 12, 1997
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin
  • Using a Lewis base to control molecular weight of novolak resins
    Patent number: 5614349
    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: December 29, 1992
    Date of Patent: March 25, 1997
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dana L. Durham, Ralph R. Dammel
  • Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
    Patent number: 5521052
    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: December 30, 1994
    Date of Patent: May 28, 1996
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Daniel P. Aubin, Dinesh N. Khanna, Douglas McKenzie
  • Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
    Patent number: 5476750
    Abstract: The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a very low level of metal ions and a substantially consistent molecular weight. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
    Type: Grant
    Filed: December 29, 1992
    Date of Patent: December 19, 1995
    Assignee: Hoechst Celanese Corporation
    Inventors: M. Dalil Rahman, Ping-Hung Lu, Daniel P. Aubin, Ralph R. Dammel, Dana L. Durham