Patents by Inventor Daniel P. Spence
Daniel P. Spence has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10279959Abstract: Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.Type: GrantFiled: December 4, 2013Date of Patent: May 7, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Daniel P. Spence, Xinjian Lei
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Patent number: 10170297Abstract: Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.Type: GrantFiled: August 12, 2014Date of Patent: January 1, 2019Assignee: VERSUM MATERIALS US, LLCInventors: Ronald Martin Pearlstein, Daniel P. Spence
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Publication number: 20180294152Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: ApplicationFiled: May 10, 2018Publication date: October 11, 2018Applicant: Versum Materials US, LLCInventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Publication number: 20180223428Abstract: Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.Type: ApplicationFiled: January 30, 2018Publication date: August 9, 2018Applicant: Versum Materials US, LLCInventors: Xinjian Lei, Manchao Xiao, Matthew R. MacDonald, Daniel P. Spence, Meiliang Wang, Suresh Kalpatu Rajaraman
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Patent number: 9997350Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: GrantFiled: March 15, 2017Date of Patent: June 12, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Patent number: 9978585Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.Type: GrantFiled: May 24, 2013Date of Patent: May 22, 2018Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Mark Leonard O'Neill
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Publication number: 20180122631Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.Type: ApplicationFiled: October 20, 2017Publication date: May 3, 2018Inventors: Manchao XIAO, Daniel P. Spence, Richard Ho
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Patent number: 9809711Abstract: A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR1)nR24-n and a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR1)nR23-n; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R23-p(R1O)pSi—R3—Si(OR1)pR23-p and a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (R1O)mR22-m(X)Si—R3—Si(OR4)2R5 wherein at least one or all of the R1 and R2 substituents are the same in both the silicon-containing precursor and catalyst compound are described herein.Type: GrantFiled: January 10, 2013Date of Patent: November 7, 2017Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Ronald Martin Pearlstein, Richard Ho, Xinjian Lei, Steven Gerard Mayorga, Daniel P. Spence
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Patent number: 9796739Abstract: Described herein are precursors and methods for forming silicon-containing films.Type: GrantFiled: June 2, 2014Date of Patent: October 24, 2017Assignee: VERSUM MATERIALS US, LLCInventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence
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Publication number: 20170186605Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: ApplicationFiled: March 15, 2017Publication date: June 29, 2017Applicant: Versum Materials US, LLCInventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Patent number: 9677178Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 ??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.Type: GrantFiled: November 13, 2015Date of Patent: June 13, 2017Assignee: VERSUM MATERIALS US, LLCInventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Richard Ho
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Patent number: 9613799Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: GrantFiled: March 18, 2016Date of Patent: April 4, 2017Assignee: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Publication number: 20160237100Abstract: Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6??I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.Type: ApplicationFiled: February 8, 2016Publication date: August 18, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Jianheng Li
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Publication number: 20160203975Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.Type: ApplicationFiled: March 18, 2016Publication date: July 14, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Patent number: 9337018Abstract: A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.Type: GrantFiled: May 24, 2013Date of Patent: May 10, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence, Haripin Chandra, Bing Han, Mark Leonard O'Neill, Steven Gerard Mayorga, Anupama Mallikarjunan
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Publication number: 20160083847Abstract: Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 ??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.Type: ApplicationFiled: November 13, 2015Publication date: March 24, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Daniel P. Spence, Xinjian Lei, Ronald Martin Pearlstein, Manchao Xiao, Richard Ho
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Patent number: 9200167Abstract: Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5??Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.Type: GrantFiled: January 18, 2013Date of Patent: December 1, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Daniel P. Spence, Ronald Martin Pearlstein, Xinjian Lei, Manchao Xiao, Richard Ho, Mark Leonard O'Neill, Haripin Chandra
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Patent number: 9079923Abstract: The present invention is a plurality of metal-containing complexes of a multidentate ketoiminate.Type: GrantFiled: July 21, 2011Date of Patent: July 14, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Xinjian Lei, Daniel P. Spence
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Publication number: 20150147871Abstract: Described herein are precursors and methods for forming silicon-containing films.Type: ApplicationFiled: June 2, 2014Publication date: May 28, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Manchao Xiao, Xinjian Lei, Daniel P. Spence
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Patent number: 9018387Abstract: Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.Type: GrantFiled: June 3, 2011Date of Patent: April 28, 2015Assignee: Air Products and Chemicals, Inc.Inventors: John Anthony Thomas Norman, Melanie K. Perez, Xinjian Lei, Daniel P. Spence, Sergei Vladimirovich Ivanov, Wade Hampton Bailey, III