Abstract: Disclosed herein are a microelectromechanical system (MEMS) devices comprising a first electrode layer, an aluminum nitride based piezoelectric layer, and a second electrode layer. The aluminum nitride based piezoelectric layer comprises a piezoelectric material of formula AlxScyYbzN, wherein x+y+z=1. Also disclosed are acoustic components comprising the piezoelectric material.

Abstract: Disclosed herein are a microelectromechanical system (MEMS) devices comprising a first electrode layer, an aluminum nitride based piezoelectric layer, and a second electrode layer. The aluminum nitride based piezoelectric layer comprises a piezoelectric material of formula AlxScyYbzN, AlxYyYbzN, AlxScyYzN, or their combination, wherein x+y+z=1. Also disclosed are acoustic components comprising the piezoelectric material.

Abstract: Disclosed herein are aluminum nitride (AlN) piezoelectric materials, piezoelectric devices and related methods of fabricating said devices. The piezoelectric materials comprise a doping element that enhances the piezoelectric properties of the material and a stiffening element, which enhances the mechanical properties of the piezoelectric material. The incorporation of an enhancing and stiffening element to binary alloys of AlN, results in a quaternary AlN alloy, which reduces current trade-offs between the piezoelectric tensor component (e33), and stiffness of the material (C33).

Abstract: A method for producing a sensor unit for nucleic acid analysis having a first electrode and a second electrode in a nanochannel, the method includes arranging a main direction of extension of the nanochannel at an angle ? from about 70° to about 110° to a direction of extension of edges of exposed surface portions of the first and second electrodes.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times ?1 and ?2, and generate the maximum changes in barrier height ??1 and ??2 at the electrodes. ?1 and ??1 are associated with the first defect type, and ?2 and ??2 are associated with the second defect type. ?1<?2 and ??1<??2 apply.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Abstract: In a method for creating hydrophilic surfaces or surface regions on one or more silicon surfaces of a substrate, a vapour phase of hydrogen peroxide is generated in a reactor by heating an aqueous hydrogen peroxide solution. The substrate having the silicon surface or surfaces to be treated is exposed to the vapour phase, whereby a hydrophilisation of the silicon surfaces in achieved.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. A first defect type and a second defect type, which is different from the first defect type, are also present in dielectric layer. The at least two different defect types accumulate at one of the two electrodes as a function of a main operating voltage applied between the first electrode and the second electrode, and of a main operating temperature that is present at characteristic times ?1 and ?2, and generate the maximum changes in barrier height ??1 and ??2 at the electrodes. ?1 and ??1 are associated with the first defect type, and ?2 and ??2 are associated with the second defect type. ?1<?2 and ??1<??2 apply.

Abstract: A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm.

Abstract: The invention relates to a galvanic cell (2) comprising a housing (4) which is equipped with at least one cell coil or a cell stack and comprising a sensor (16) for detecting the pressure of the galvanic cell (2). The housing (4) has a recess which is formed from a through-opening between an interior and an exterior of the cell (2), and the sensor (16) is arranged outside of the cell (2) so as to be secured directly or indirectly to the cell. The sensor (16), in particular a micro electromechanical system, is in contact with the interior of the galvanic cell (2) via the recess. The invention additionally relates to a method for producing such a galvanic cell (2).

Abstract: A micromechanical sound transducer system includes a substrate that includes (a) a cavity with a cavity edge area, (b) a front side, and (c) a rear side; a piezoelectric vibrating beam that is elastically suspended on the front side and that extends across the cavity; and, for the piezoelectric vibrating beam, a respective deflection limiting device that is on a front edge area of the respective vibrating beam and that is configured to limit a deflection of the respective vibrating beam to a limiting deflection by causing the respective front edge area of the respective vibrating beam to interact with the cavity edge area or an opposing front edge area of another vibrating beam.

Abstract: A method for manufacturing a micromechanical device includes providing a silicon substrate having a front side and a rear side, where a first normal of the front side deviates by a first angle from the <111> direction of the silicon substrate; forming in the front side first and second trenches that are spaced apart from and essentially parallel to each other, with the first and second trenches extending along a direction of the deviation; forming on the front side a first etching mask that covers the front side except for a first opening area between the first and second trenches; and anisotropically etching the front side using the etching mask, thereby forming in the opening area an oblique surface having a second angle to the first normal, which approximately corresponds to the first angle.

Abstract: A micromechanical sound transducer system includes a substrate that includes (a) a cavity with a cavity edge area, (b) a front side, and (c) a rear side; a piezoelectric vibrating beam that is elastically suspended on the front side and that extends across the cavity; and, for the piezoelectric vibrating beam, a respective deflection limiting device that is on a front edge area of the respective vibrating beam and that is configured to limit a deflection of the respective vibrating beam to a limiting deflection by causing the respective front edge area of the respective vibrating beam to interact with the cavity edge area or an opposing front edge area of another vibrating beam.

Abstract: An assembly body for micromirror chips that partly encloses an internal cavity, the assembly body including at two sides oriented away from one another, at least one respective partial outer wall that is fashioned transparent for a specified spectrum, and the assembly body having at least one first outer opening on which a first micromirror chip can be attached, and a second outer opening on which a second micromirror chip can be attached, in such a way that a light beam passing through the first partial outer wall is capable of being deflected by the first micromirror chip onto the second micromirror chip, and is capable of being deflected by the second micromirror chip through the second partial outer wall. A mirror device and a production method for a mirror device are also described.

Abstract: A micromechanical component having a substrate which includes a micro-electromechanical microphone structure, the micro-electromechanical microphone structure encompassing at least one piezoelectric layer and at least one polymer mass as at least part of a packaging of the substrate fitted with the micro-electromechanical microphone structure, which is in contact with at least a partial outer surface of the substrate fitted with the micro-electromechanical microphone structure. A method is also described for packaging a substrate having a micro-electromechanical microphone structure encompassing at least one piezoelectric layer by developing at least a portion of a packaging of the substrate fitted with the micro-electromechanical microphone structure from at least one polymer mass, and the at least one polymer mass being applied directly on at least a partial outer surface of the substrate fitted with the micro-electromechanical microphone structure.

Abstract: The invention relates to a galvanic cell (2) comprising a housing (4) which is equipped with at least one cell coil or a cell stack and comprising a sensor (16) for detecting the pressure of the galvanic cell (2). The housing (4) has a recess which is formed from a through-opening between an interior and an exterior of the cell (2), and the sensor (16) is arranged outside of the cell (2) so as to be secured directly or indirectly to the cell. The sensor (16), in particular a micro electromechanical system, is in contact with the interior of the galvanic cell (2) via the recess. The invention additionally relates to a method for producing such a galvanic cell (2).

Abstract: An assembly body for micromirror chips that partly encloses an internal cavity, the assembly body including at two sides oriented away from one another, at least one respective partial outer wall that is fashioned transparent for a specified spectrum, and the assembly body having at least one first outer opening on which a first micromirror chip can be attached, and a second outer opening on which a second micromirror chip can be attached, in such a way that a light beam passing through the first partial outer wall is capable of being deflected by the first micromirror chip onto the second micromirror chip, and is capable of being deflected by the second micromirror chip through the second partial outer wall. A mirror device and a production method for a mirror device are also described.

Abstract: A sensor element for acquiring at least one property of a measurement gas in a measurement gas compartment, in particular for acquiring a portion of a gas component in the measurement gas or a temperature of the measurement gas, includes a bearer element and at least one solid electrolyte layer. The solid electrolyte layer is situated on the bearer element. The solid electrolyte layer is at least partially epitaxially fashioned. The bearer element has at least one opening, so that the solid electrolyte layer has at least one membrane segment. In addition, a method is provided for producing such a sensor element.

Abstract: An inertial sensor includes a first sensor element, which is damped against vibrations from an interface of the inertial sensor by a damping element. The first sensor element is configured to detect a first measured variable in a first frequency band, and the damping element is configured to dampen vibrations at least in the first frequency band. The inertial sensor further includes a second sensor element, which is mechanically coupled to the interface. The second sensor element is configured to detect a second measured variable in a second frequency band.

Abstract: A device for detecting at least one gaseous analyte comprises a detection section including a semiconductor substrate and at least one sensor element, which is arranged on the semiconductor substrate. The at least one sensor element includes two electrodes and a solid electrolyte layer arranged between the electrodes. The device also comprises a protective cap configured to cover the at least one sensor element, and at least one temperature-control unit configured for temperature control of the protective cap. The at least one temperature-control unit is arranged on the protective cap. The protective cap is formed from a semiconductor material. The device further comprises a diffusion section having a plurality of passage openings for the gaseous analyte arranged at least in a partial section of the protective cap.