Abstract: A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Abstract: An apparatus for forming plastic preforms into plastic containers, having a transport device which transports the plastic preforms to be formed along a predetermined transport path, wherein the transport device has a rotatable transport carrier wherein a plurality of forming stations are arranged. The forming stations each have blow-molding devices within which the plastic preforms can be formed into the plastic containers by applying a flowable medium. The forming stations each have application devices for applying the flowable medium to the plastic preforms, and the apparatus has a feed device for feeding plastic preforms to be formed to the transport apparatus, and a discharge device for discharging formed containers from the transport device. The apparatus has a clean room within which the plastic preforms or the plastic containers are transported at least sectionally. The apparatus has an ejection device to eject plastic preforms or plastic containers from the transport path.

Abstract: A metal-containing photoresist film may be deposited on a semiconductor substrate. Unintended metal-containing material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, exposure, baking, development, etch, or other photolithography operations. A dry chamber clean may remove some of the unintended metal-containing material by exposure to plasma. A dry chamber clean may remove some of the unintended metal-containing material and modify some of the unintended metal-containing material by exposure to an etch gas at an elevated temperature without striking a plasma. The dry chamber clean may remove the modified metal-containing material using plasma having a chemistry configured to form volatile products of the modified metal-containing material. In some embodiments, the plasma includes a halide-containing plasma, hydrogen-containing plasma, hydrocarbon-containing plasma, inert gas-containing plasma, or mixtures thereof.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15° C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Abstract: Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Abstract: Process condition management facilitates the combination of dry development and etching into a single process chamber; eliminating the necessity for a post-dry development bake step during semiconductor manufacturing. Methods and apparatuses for rapidly instituting a large drop in process chamber pressure allow thermal dry development and an O2 flash treatment or thermal dry development and plasma hardmask open operations to take place without wafer transfer.

Abstract: An apparatus for treating plastics material preforms has a transport device which transports the plastics material preforms along a predetermined transport path, at least one heating unit to heat the transported plastics material preforms, and a forming device arranged downstream of the heating device for forming the heated plastics material preforms into plastics material containers. The apparatus has at least one temperature detection device for detecting to detect a temperature of the plastics material preforms heated by the heating device, in a spatially resolved manner at least in a longitudinal direction of the plastics material preforms, and an image recording device to record a spatially resolved image of the plastics material preforms, wherein the image recording device is configurable taking into account at least one parameter characteristic of the plastics material preforms to be inspected.

Abstract: A method for selectively etching at least one feature in a silicon oxide region with respect to a lower oxygen containing region is provided. An etch gas comprising a metalloid or metal containing precursor and a halogen containing component is provided. The etch gas is formed into a plasma. At least one feature in the silicon oxide region is selectively etched with respect to the lower oxygen containing region, while simultaneously forming a metalloid or metal containing hardmask over the lower oxygen containing region.

Abstract: Photoresist rework of metal-containing photoresist is disclosed. Rework can be accomplished using a thermal process by exposing a substrate to an elevated temperature and an etch gas. Rework can be also accomplished using a wet process by exposing the substrate to an inorganic acidic solution. Residue or other contaminants may be cleaned up from the substrate after rework by exposure to high temperatures, plasma, or wet clean.

Abstract: Disclosed is an apparatus for forming plastic preforms into plastic containers with a movable carrier on which a plurality of forming stations for forming the plastic preforms into the plastic containers is arranged, wherein the forming stations each have valve arrangements for applying a flowable medium to the plastic preforms in order to expand them, and wherein each valve arrangement has at least two controllable valve devices, having movable piston devices which can switch the valve devices between at least two valve positions, characterized in that the device has a monitoring device for checking a state of wear of at least one of the valve devices. The monitoring device has at least one detection device which is configured for detecting the state of wear of the valve device optically and without contact.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: Disclosed herein are radiative heating systems and methods for use with dry development processes. Such systems and methods may, in some instances, allow for volatile halides that may be trapped on the surface of a wafer after dry development processing has completed to be driven out of the wafer through radiative heating thereof. Such systems and methods may, in some instances, be provided in an in-situ context in which the wafers being heated are radiatively heated within the same chamber as the dry development process is performed. In other contexts, such radiative heating may be performed in other locations, e.g., as the wafer transits from the processing chamber to another chamber or in another chamber entirely.

Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Abstract: The present invention relates to anti-IL1RAP binding compounds, in particular new anti-IL1RAP antibodies and therapeutic and diagnostic methods and compositions for using the same.