Patents by Inventor Daniel Pribat

Daniel Pribat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the growing of heteroepitaxial layers
    Patent number: 5356510
    Abstract: A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.
    Type: Grant
    Filed: October 6, 1992
    Date of Patent: October 18, 1994
    Assignee: Thomson-CSF
    Inventors: Daniel Pribat, Bruno Gerard, Pierre Legagneux