Abstract: A semiconductor laser diode using the aluminum gallium, arsenide, gallium indium arsenide phosphide, indium phosphide, (AlGaInAs/GaInAsP/InP) material system and related combinations is disclosed. Both the design of the active layer and the design of the optical cavity are optimized to minimize the temperature rise of the active region and to minimize the effects of elevated active layer temperature on the laser efficiency. The result is a high output power semiconductor laser for the wavelengths between 1.30 and 1.61 micrometers for the pumping of erbium doped waveguide devices or for direct use in military, medical, or commercial applications.

Abstract: A technique for passive alignment of an opto-electronic device, such as laser, by alignment fiducials to a silicon wafer board utilizes a tilted notch in the opto-electronic device. This system overcomes limitations using standard etched notches for previous passive alignment systems. Specifically, the tilted notch presents a range of offset distances between the edge of the notch and the active light-emitting spot of the laser. Depending on the location at which the wafer is diced or cleaved, the distance from the notch on the laser to the laser stripe can be adjusted after the laser wafer is fabricated.