Patents by Inventor Daniel R. HEUTTL

Daniel R. HEUTTL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Monolithic series switching semiconductor device having low-resistance substrate contact structure and method
    Patent number: 10032937
    Abstract: A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: July 24, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Ali Salih, Gordon M. Grivna, Daniel R. Heuttl, Osamu Ishimaru, Thomas Keena, Masafumi Uehara
  • MONOLITHIC SERIES SWITCHING SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE SUBSTRATE CONTACT STRUCTURE AND METHOD
    Publication number: 20180138319
    Abstract: A semiconductor device structure includes a region of semiconductor material with a first major surface and an opposing second major surface. A contact structure is disposed in a first portion of the region of semiconductor material and includes a tub structure extending from adjacent a first portion of the first major surface. A plurality of structures comprising portions of the region of semiconductor material extend outward from a lower surface of the tub structure. In some embodiments, the plurality of structures comprises a plurality of free-standing structures. A conductive material is disposed within the tub structure and laterally surrounding the plurality of structures. In one embodiment, the contact structure facilitates the fabrication of a monolithic series switching diode structure having a low-resistance substrate contact.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 17, 2018
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Ali SALIH, Gordon M. GRIVNA, Daniel R. HEUTTL, Osamu ISHIMARU, Thomas KEENA, Masafumi UEHARA