Abstract: A photovoltaic module includes front and back sealing layers and at least one photovoltaic cell positioned located therebetween. A moisture resistant layer provided between the first and second sealing layers extends around a portion of a perimeter of the at least one photovoltaic cell. A moisture barrier structure including moisture barrier particles is operatively connected to the sealing layers. The moisture barrier structure improves the moisture resistance of the sealing layer and decreases the water vapor transmission rate into the photovoltaic module.

Abstract: A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.

Abstract: A photovoltaic module includes front and back sealing layers and at least one photovoltaic cell positioned located therebetween. A moisture resistant layer provided between the first and second sealing layers extends around a portion of a perimeter of the at least one photovoltaic cell. A moisture barrier structure including moisture barrier particles is operatively connected to the sealing layers. The moisture barrier structure improves the moisture resistance of the sealing layer and decreases the water vapor transmission rate into the photovoltaic module.

Abstract: A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.

Abstract: A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the backing tube and adapted for transporting coolant. The conduit includes at least one first opening positioned for providing the coolant in a substantially circumferential direction from the conduit toward an inner surface of the backing tube into a gap volume between a front side of the magnet assembly and the inner surface of the backing tube.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 ?m, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.

Abstract: An alkali-containing transition metal sputtering target, the method of making the same, and the method of manufacturing a solar cell using the same.

Abstract: A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)?0.3, and where the content is measured in atomic percent.

Abstract: A method and apparatus for forming a sputtering target are provided that includes a copper indium gallium sputtering target material on a backing structure. The sputtering target is formed by compressing pre-alloyed and atomized powders of Cu, In, and Ga at pressures below 35,000 psi. In some embodiments the sputtering target material contains Na, S, or Se. In other embodiments the sputtering target is formed by isothermal compression.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 ?m, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by cold spraying. The step of cold spraying includes spraying a powder comprising copper, indium and gallium in a process gas stream, and at least one of an average particle size of the powder is at least 35 ?m, a velocity of the process gas stream is at least 150 m/s, or a process gas pressure is 20 bar or less.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by spray forming.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a die cast copper indium gallium sputtering target material on the backing structure.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering target includes at least one metal selected from copper, indium and gallium and a sodium containing compound.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A method of making a photovoltaic device includes forming a compound semiconductor layer including copper, indium, gallium, selenium and sulfur by reactive sputtering at least one target including copper, indium, gallium and a sulfur compound in an atmosphere including selenium.

Abstract: Improved methods of depositing copper seed layers in copper interconnect structure fabrication processes are provided. Also provided are the resulting structures, which have improved electromigration performance and reduced line resistance. According to various embodiments, the methods involve depositing a copper seed bilayer on a barrier layer in a recessed feature on a partially fabricated semiconductor substrate. The bilayer has a copper alloy seed layer and a pure copper seed layer, with the pure copper seed layer is deposited on the copper alloy seed layer. The copper seed bilayers have reduced line resistance increase and better electromigration performance than conventional doped copper seed layers. Precise line resistance control is achieved by tuning the bilayer thickness to meet the desired electromigration performance.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.