Abstract: A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

Abstract: A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.

Abstract: A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

Abstract: A method and an apparatus for in-situ monitoring of chemical mechanical planarization (CMP) processes are disclosed. In one aspect, a CMP system includes a carrier configured to retain a substrate, a platen supporting a polishing pad, an optical detector positioned on a side of the polishing pad opposite the substrate and configured to generate a first signal, one or more position encoders configured to generate second signals, and a controller. The controller is configured to receive the first signal and the second signals, identify one or more measurement sites on the substrate based on the second signals, select one or more of the measurement sites for repeated measurements based on the first signal, and determine the removal rate and/or thickness of a film of the substrate at the selected one or more of the measurement sites based on the first signal and the second signals.

Abstract: Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

Abstract: A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W1. The second resilient membrane includes a second imperforated substrate support portion with a width W2. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.

Abstract: An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein an axis of rotation extends through the support. The apparatus includes at least one elongated member including a first portion and a second portion opposed to the first portion. The first portion is configured to rotatably connect to the support and pivot the elongated member about the axis of rotation relative to the support through an angle of rotation that is at least about 270 degrees in a single direction. The apparatus includes a carrier head configured to connect to the second portion and to hold and process a substrate.

Abstract: A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

Abstract: A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.

Abstract: Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.

Abstract: A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.

Abstract: An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein an axis of rotation extends through the support. The apparatus includes at least one elongated member including a first portion and a second portion opposed to the first portion. The first portion is configured to rotatably connect to the support and pivot the elongated member about the axis of rotation relative to the support through an angle of rotation that is at least about 270 degrees in a single direction. The apparatus includes a carrier head configured to connect to the second portion and to hold and process a substrate.