Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: The present invention encompasses a method of repairing a defect on a lithography mask, comprising the following steps: (a.) directing a particle beam onto the defect to induce a local etching operation on the defect; (b.) monitoring the etching operation using backscattered particles and/or secondary particles and/or another free-space signal generated by the etching operation, in order to detect a transition from the local etching operation on the defect to a local etching operation on an element of the mask beneath the defect, and (c.) feeding in at least one contrast gas in order to increase contrast in the detection of the transition.

Abstract: The present disclosure relates to methods, to an apparatus and to a computer program for processing of a lithography object. More particularly, the present invention relates to a method for removing a material, to a corresponding apparatus and to a method for lithographic processing of a wafer, and to a computer program for performing the methods. A method for processing a lithography object comprises, for example: providing a first gas comprising first molecules; providing a particle beam in a working region of the object for removal of a first material in the working region based at least partly on the first gas, wherein the first material comprises ruthenium.

Abstract: The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

Abstract: An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a providing unit for providing the particle beam; a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample; a detecting unit configured to detect an actual position of the shielding element; and an adjusting unit for adjusting the shielding element from the actual position into a target position.

Abstract: Methods for repairing a defect of a lithographic mask with a particle beam are described. One such method can comprise the following steps: Processing the defect with the particle beam with a first set of processing parameters; processing the defect with the particle beam with a second set of processing parameters; wherein at least one parameter from the first set of processing parameters differs from the second set of processing parameters.

Abstract: The present invention relates to a method for setting at least one side wall angle of at least one pattern element of a photolithographic mask including the steps of: (a) providing at least one precursor gas; (b) providing at least one massive particle beam which induces a local chemical reaction of the at least one precursor gas; and (c) altering at least one parameter of the particle beam and/or a process parameter during the local chemical reaction in order to set the at least one side wall angle of the at least one pattern element.

Abstract: The present invention relates to a method for preparing a hydrogel nanomembrane comprising: a) formation of a non-cross-linked hydrogel nanofilm on a first substrate; b) cross-linking the non-cross-linked hydrogel with a cross-linking agent to obtain a cross-linked hydrogen nanomembrane; and c) transferring the cross-linked hydrogel nanomembrane to a second substrate, a respective cross-linked hydrogel nanomembrane, a TEM grid comprising the same and use thereof.

Abstract: The present invention relates to a method for examining a beam of charged particles, including the following steps: producing persistent interactions of the beam with a sample at a plurality of positions of the sample relative to the beam and deriving at least one property of the beam by analyzing the spatial distribution of the persistent interactions at the plurality of positions.

Abstract: The present invention discloses functionalized nanomembranes, a method for preparation and their use. The functionalized nanomembrane comprises a) a first layer comprising a nanomaterial, b) a second layer comprising a biorepulsive material, the second layer being attached to at least one side of the first layer, and c) affinity groups, attached to the second layer.

Abstract: The present invention relates to a method for preparing a hydrogel nanomembrane comprising: a) formation of a non-cross-linked hydrogel nanofilm on a first substrate; b) cross-linking the non-cross-linked hydrogel with a cross-linking agent to obtain a cross-linked hydrogen nanomembrane; and c) transferring the cross-linked hydrogel nanomembrane to a second substrate, a respective cross-linked hydrogel nanomembrane, a TEM grid comprising the same and use thereof.

Abstract: The present invention discloses functionalized nanomembranes, a method for preparation and their use. The functionalized nanomembrane comprises a) a first layer comprising a nanomaterial, b) a second layer comprising a biorepulsive material, the second layer being attached to at least one side of the first layer, and c) affinity groups, attached to the second layer.