Patents by Inventor Daniel Ricardo NAPOLI

Daniel Ricardo NAPOLI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P+ or N+ type doping process for semiconductors
    Patent number: 11769668
    Abstract: A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: September 26, 2023
    Assignee: ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN)
    Inventors: Gianluigi Maggioni, Davide De Salvador, Daniel Ricardo Napoli, Enrico Napolitani
  • P+ OR N+ TYPE DOPING PROCESS FOR SEMICONDUCTORS
    Publication number: 20230170219
    Abstract: A p+ or n+ type doping process for semiconductors, allows to implement a semiconductor with a highly doped surface layer, and it comprises the steps of: providing a substrate made of semiconductor material; depositing on a surface of 5 the substrate made of semiconductor material a thin source layer made of dopant material acting as dopant source; depositing on said source layer an additional protective surface layer made of semiconductor material; inducing liquefaction of the surface layer at least until the source layer; and cooling down the substrate surface so as to obtain the diffusion of the dopant material.
    Type: Application
    Filed: April 20, 2021
    Publication date: June 1, 2023
    Applicant: ISTITUTO NAZIONALE DI FISICA NUCLEARE (INFN)
    Inventors: Gianluigi MAGGIONI, Davide DE SALVADOR, Daniel Ricardo NAPOLI, Enrico NAPOLITANI